BSC159N10LSFGATMA1 Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

BSC159N10LSFGATMA1 is a MOSFET device that is available in a through hole Polabarl package. It is ideal for use in a wide range of applications such as power switching, motor control, and logic circuits. The MOSFET device also features a low gate capacitance which makes it highly efficient and reliable. BSC159N10LSFGATMA1 is a single transistor device and it is designed for use in circuits where high switching speeds, excellent thermal stability, and high input and output impedances are required.

A MOSFET is a type of transistor that is mainly used for analog and digital switching applications. It is a voltage-controlled device, which means that the current passing through the device is controlled by the voltage applied to the device\'s gate terminal. A MOSFET device generally consists of a thin layer of metal oxide that is insulated by a physical barrier between the source and the drain. The gate terminal is used to apply a voltage to the thin insulating layer and control current flow through the MOSFET. The physical barrier prevents leakage currents from passing between the source and the drain.

BSC159N10LSFGATMA1 is a N-channel MOSFET device which means it uses electrons, rather than holes, for conduction. The device has a drain-source breakdown voltage of 100V and a drain-source on-state resistance of 4.7 Ohms. This makes it an ideal choice for use in power circuit applications. The device features an average gate threshold voltage of -1.5 Volts which means it can be used in high performance switching applications. The device also features a low gate capacitance of 3.7pF, which ensures that it can switch quickly and with high efficiency.

BSC159N10LSFGATMA1 is ideal for a variety of applications such as in frequency selection circuits, along with other power switching applications. The device is also widely used in motor control, logic circuits, and various other digital switching applications. The device is also capable of operating at high temperatures of up to 175°C, making it an excellent choice for many industrial and automotive applications.

BSC159N10LSFGATMA1 is a single MOSFET device which means it has a single gate terminal and a single source and drain terminal. The single gate terminal is used to apply the controlling gate voltage which allows current to flow between the source and drain. The voltage applied to the gate is used to increase or decrease the amount of current that can flow between the two terminals. The device is designed to operate in a wide variety of conditions and has excellent thermal stability, making it an ideal choice for many applications.

In conclusion, BSC159N10LSFGATMA1 is a single MOSFET device which is widely used in a variety of applications such as motor control and power switching. The device has a low gate capacitance and a low drain-source resistance, making it an ideal choice for high-performance switching applications. It is also capable of operating at high temperatures, making it an excellent choice for many industrial and automotive applications.

The specific data is subject to PDF, and the above content is for reference