BSC123N08NS3GATMA1 Discrete Semiconductor Products |
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| Allicdata Part #: | BSC123N08NS3GATMA1TR-ND |
| Manufacturer Part#: |
BSC123N08NS3GATMA1 |
| Price: | $ 0.28 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 80V 55A TDSON-8 |
| More Detail: | N-Channel 80V 11A (Ta), 55A (Tc) 2.5W (Ta), 66W (T... |
| DataSheet: | BSC123N08NS3GATMA1 Datasheet/PDF |
| Quantity: | 30000 |
| 1 +: | $ 0.28000 |
| 10 +: | $ 0.27160 |
| 100 +: | $ 0.26600 |
| 1000 +: | $ 0.26040 |
| 10000 +: | $ 0.25200 |
| Vgs(th) (Max) @ Id: | 3.5V @ 33µA |
| Package / Case: | 8-PowerTDFN |
| Supplier Device Package: | PG-TDSON-8 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 2.5W (Ta), 66W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1870pF @ 40V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 25nC @ 10V |
| Series: | OptiMOS™ |
| Rds On (Max) @ Id, Vgs: | 12.3 mOhm @ 33A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 11A (Ta), 55A (Tc) |
| Drain to Source Voltage (Vdss): | 80V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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BSC123N08NS3GATMA1 Application Field and Working Principle
The BSC123N08NS3GATMA1 is a type of high-performance, low-voltage N-channel MOSFET.
It is an ultra-small, low-voltage device with an operating temperature range from -40°C to 125°C. The BSC123N08NS3GATMA1 is designed for use in applications such as power management, DC-DC conversion, switch mode power supplies (SMPS) and many more.
The device has a drain-source breakdown voltage (BVds) of 8V and a maximum drain-source on-state resistance (RDS(on)) of 22mOhm. It is available in an ultra-small 3x3mm DFN2020 package and has a total gate charge (Qg) of only 6.9nC.
Working Principle
MOSFETs are transistors with the source, drain and gate electrodes. Like any other transistor, the MOSFET uses the principle of minority carrier to control current flow from the source to the drain. When there is a voltage difference between the source and drain electrodes, a conductive channel of current forms between them. This channel is referred to as the “channel”.
The gate electrode is used to control the channel. When there is no input to the gate, the channel will be in the off-state and current cannot flow. When an input is applied to the gate electrode, it modulates (opens or closes the channel) depending on the voltage applied. Thus, the BSC123N08NS3GATMA1 allows a certain current to flow from the source to the drain when the gate voltage is high enough.
Further Applications
The BSC123N08NS3GATMA1 is also suitable to use in continuous current-mode control converters. It has a very low on-resistance which helps with keeping the power losses at a minimum. Furthermore, the low gate charge allows for the device to be switched at a higher frequency. This makes it ideal for applications ranging from 12V to 48V.
In addition to that, the BSC123N08NS3GATMA1 features low capacitance. This reduces the switching losses when switching between high- or low-voltage levels.
All in all, the BSC123N08NS3GATMA1 is an excellent choice for applications such as power supplies and battery chargers. Its low voltage operation and high-frequency switching capabilities allow it to be a versatile and reliable choice.
The specific data is subject to PDF, and the above content is for reference
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BSC123N08NS3GATMA1 Datasheet/PDF