BSC123N08NS3GATMA1 Allicdata Electronics

BSC123N08NS3GATMA1 Discrete Semiconductor Products

Allicdata Part #:

BSC123N08NS3GATMA1TR-ND

Manufacturer Part#:

BSC123N08NS3GATMA1

Price: $ 0.28
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 80V 55A TDSON-8
More Detail: N-Channel 80V 11A (Ta), 55A (Tc) 2.5W (Ta), 66W (T...
DataSheet: BSC123N08NS3GATMA1 datasheetBSC123N08NS3GATMA1 Datasheet/PDF
Quantity: 30000
1 +: $ 0.28000
10 +: $ 0.27160
100 +: $ 0.26600
1000 +: $ 0.26040
10000 +: $ 0.25200
Stock 30000Can Ship Immediately
$ 0.28
Specifications
Vgs(th) (Max) @ Id: 3.5V @ 33µA
Package / Case: 8-PowerTDFN
Supplier Device Package: PG-TDSON-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 66W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1870pF @ 40V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Series: OptiMOS™
Rds On (Max) @ Id, Vgs: 12.3 mOhm @ 33A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 55A (Tc)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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BSC123N08NS3GATMA1 Application Field and Working Principle

The BSC123N08NS3GATMA1 is a type of high-performance, low-voltage N-channel MOSFET.

It is an ultra-small, low-voltage device with an operating temperature range from -40°C to 125°C. The BSC123N08NS3GATMA1 is designed for use in applications such as power management, DC-DC conversion, switch mode power supplies (SMPS) and many more.

The device has a drain-source breakdown voltage (BVds) of 8V and a maximum drain-source on-state resistance (RDS(on)) of 22mOhm. It is available in an ultra-small 3x3mm DFN2020 package and has a total gate charge (Qg) of only 6.9nC.

Working Principle

MOSFETs are transistors with the source, drain and gate electrodes. Like any other transistor, the MOSFET uses the principle of minority carrier to control current flow from the source to the drain. When there is a voltage difference between the source and drain electrodes, a conductive channel of current forms between them. This channel is referred to as the “channel”.

The gate electrode is used to control the channel. When there is no input to the gate, the channel will be in the off-state and current cannot flow. When an input is applied to the gate electrode, it modulates (opens or closes the channel) depending on the voltage applied. Thus, the BSC123N08NS3GATMA1 allows a certain current to flow from the source to the drain when the gate voltage is high enough.

Further Applications

The BSC123N08NS3GATMA1 is also suitable to use in continuous current-mode control converters. It has a very low on-resistance which helps with keeping the power losses at a minimum. Furthermore, the low gate charge allows for the device to be switched at a higher frequency. This makes it ideal for applications ranging from 12V to 48V.

In addition to that, the BSC123N08NS3GATMA1 features low capacitance. This reduces the switching losses when switching between high- or low-voltage levels.

All in all, the BSC123N08NS3GATMA1 is an excellent choice for applications such as power supplies and battery chargers. Its low voltage operation and high-frequency switching capabilities allow it to be a versatile and reliable choice.

The specific data is subject to PDF, and the above content is for reference

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