
Allicdata Part #: | BSC120N03MSGATMA1TR-ND |
Manufacturer Part#: |
BSC120N03MSGATMA1 |
Price: | $ 0.16 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 30V 39A TDSON-8 |
More Detail: | N-Channel 30V 11A (Ta), 39A (Tc) 2.5W (Ta), 28W (T... |
DataSheet: | ![]() |
Quantity: | 5000 |
5000 +: | $ 0.14857 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | PG-TDSON-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta), 28W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1500pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 10V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 12 mOhm @ 30A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 11A (Ta), 39A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The BSC120N03MSGATMA1 is a single N-channel transistor that belongs to the family of field-effect transistors (FETs). It is manufactured by Infineon. This one-of-a-kind transistor has characteristics that are perfectly suited for a variety of applications. In this article, we will discuss the application field and working principle of the BSC120N03MSGATMA1, as well as its advantages over other devices.
Application Field
The BSC120N03MSGATMA1 is commonly used in power amplifier circuits, as well as in various power converters and inductors. It is also highly suitable as a pull-up resistor, as it can provide a stable voltage output. Besides, the device is mainly used in switching regulators, motor control circuits and processor supplies. With capability of providing improved efficiency and extended power range, the BSC120N03MSGATMA1 is the perfect choice for different applications.
Working Principle of BSC120N03MSGATMA1
The BSC120N03MSGATMA1 is an N-channel MOSFET (metal-oxide semiconductor field-effect transistor). It is composed of three terminals: drain, source, and gate. The function of the gate is to control the current flow through the device. The gate is connected to a voltage-source to control the current flow. When the gate receives a certain voltage, it will turn on the current. The drain is where the transistor turns the power on and off. The source is connected to the ground.
The working principle of the BSC120N03MSGATMA1 is based on the voltage-controlled current source. It allows the use of small signals to control a wide range of current. This is made possible by a high input impedance of the device. When an input voltage is applied to the gate, it creates a channel between the source and the drain, thus allowing the current to flow. The voltage of the gate establishes a low resistance path between the source and the drain, through which current flows. The higher the voltage at the gate terminal, the higher the current flow.
Advantages of BSC120N03MSGATMA1
The BSC120N03MSGATMA1 offers many advantages. One of the most important of them is its relatively low voltage drop, which is important for power supplies applications. This is because it reduces heat generation and extends the lifetime of the device. Moreover, it enables the device to operate at higher frequencies. This can be very useful for controlling high power loads such as those found in industrial environments.
Another great benefit of the BSC120N03MSGATMA1 is its small size. This makes it perfectly suited for space-limited applications. Furthermore, it also has a low power loss, which improves efficiency. Finally, its extremely low ON resistance ensures a low turn-on and turn-off times, making it ideal for switching power supplies.
In conclusion, the BSC120N03MSGATMA1 is a single N-channel transistor that can be used in a wide range of applications. Its unique characteristics allow it to provide improved efficiency and extended power range. Furthermore, its small size and low power loss make it the perfect choice for space-limited applications. Finally, its extremely low ON resistance ensures a low turn-on and turn-off times, making it ideal for switching power supplies.
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