BSC160N10NS3GATMA1 Discrete Semiconductor Products |
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| Allicdata Part #: | BSC160N10NS3GATMA1TR-ND |
| Manufacturer Part#: |
BSC160N10NS3GATMA1 |
| Price: | $ 0.27 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 100V 42A TDSON-8 |
| More Detail: | N-Channel 100V 8.8A (Ta), 42A (Tc) 60W (Tc) Surfac... |
| DataSheet: | BSC160N10NS3GATMA1 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 0.27200 |
| 10 +: | $ 0.26384 |
| 100 +: | $ 0.25840 |
| 1000 +: | $ 0.25296 |
| 10000 +: | $ 0.24480 |
| Vgs(th) (Max) @ Id: | 3.5V @ 33µA |
| Package / Case: | 8-PowerTDFN |
| Supplier Device Package: | PG-TDSON-8 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 60W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1700pF @ 50V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 25nC @ 10V |
| Series: | OptiMOS™ |
| Rds On (Max) @ Id, Vgs: | 16 mOhm @ 33A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 8.8A (Ta), 42A (Tc) |
| Drain to Source Voltage (Vdss): | 100V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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BSC160N10NS3GATMA1 is a silicon N-channel MOSFET (Metal–Oxide–Semiconductor Field-Effect Transistor). It belongs to the selected family of insulated-gate transistors known as FETs that operate by generating a field in the channel formed between the source and the drain to control the current flow. The working principle of a MOSFET is three- and four-terminal device that can be used as a switch or voltage amplifier, depending on how an external circuit is attached to its terminals.
Due to its small size, simple driving circuit and low power consumption, BSC160N10NS3GATMA1 is widely used in power switching applications. For example, it can be used in power electronics to control the spinning speed of a motor, in automotive applications as a switch to control lamps and other electrical system, and in audio equipment as a power amplifier. Besides, it is also suitable for use in RF, low noise amplifier circuits, and other applications that require high frequency switching.
The core of BSC160N10NS3GATMA1 is the Basic Structure Unit (BSU), which includes an integrated insulated gate field-effect transistor. This BSU has a number of features, such as high switching speed, low on-resistance, high power density, high on-state current, low capacitance, low drive voltage, and low operating temperature.
As a voltage-controlled semiconductor switch, BSC160N10NS3GATMA1 needs a certain amount of electric current to turn on or turn off its switch. When a positive voltage is applied between its gate and source, a current passes through the channel and charges the gate. This, in turn, causes a voltage drop between the gate and the source. When the voltage drop is greater than the specified threshold voltage, the switch turns on and it allows a current to flow from source to drain. When the voltage between the gate and the source is decreased below the threshold level, the switch turns off and no current is allowed to pass through the channel.
As a voltage amplifier, BSC160N10NS3GATMA1 needs a certain input voltage to control its current output. When the input voltage increases, the current output also increases. The amplifier is used to amplify current or voltage signals. It can also be used as an impedance converter or impedance multiplier, which can convert a low-impedance signal into a high-impedance signal or vice versa.
BSC160N10NS3GATMA1 is an efficient, reliable, cost effective FET that can be used in a variety of applications. It has a low on-resistance and low gate charge, which makes it suitable for high frequency switching applications. Additionally, it has a low capacitance and low operating temperature, which makes it suitable for use in signaling and digital applications. This makes it a very versatile and popular choice for many power applications.
The specific data is subject to PDF, and the above content is for reference
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BSC160N10NS3GATMA1 Datasheet/PDF