BSC160N10NS3GATMA1 Allicdata Electronics

BSC160N10NS3GATMA1 Discrete Semiconductor Products

Allicdata Part #:

BSC160N10NS3GATMA1TR-ND

Manufacturer Part#:

BSC160N10NS3GATMA1

Price: $ 0.27
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 100V 42A TDSON-8
More Detail: N-Channel 100V 8.8A (Ta), 42A (Tc) 60W (Tc) Surfac...
DataSheet: BSC160N10NS3GATMA1 datasheetBSC160N10NS3GATMA1 Datasheet/PDF
Quantity: 1000
1 +: $ 0.27200
10 +: $ 0.26384
100 +: $ 0.25840
1000 +: $ 0.25296
10000 +: $ 0.24480
Stock 1000Can Ship Immediately
$ 0.27
Specifications
Vgs(th) (Max) @ Id: 3.5V @ 33µA
Package / Case: 8-PowerTDFN
Supplier Device Package: PG-TDSON-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 60W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Series: OptiMOS™
Rds On (Max) @ Id, Vgs: 16 mOhm @ 33A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 42A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

BSC160N10NS3GATMA1 is a silicon N-channel MOSFET (Metal–Oxide–Semiconductor Field-Effect Transistor). It belongs to the selected family of insulated-gate transistors known as FETs that operate by generating a field in the channel formed between the source and the drain to control the current flow. The working principle of a MOSFET is three- and four-terminal device that can be used as a switch or voltage amplifier, depending on how an external circuit is attached to its terminals.

Due to its small size, simple driving circuit and low power consumption, BSC160N10NS3GATMA1 is widely used in power switching applications. For example, it can be used in power electronics to control the spinning speed of a motor, in automotive applications as a switch to control lamps and other electrical system, and in audio equipment as a power amplifier. Besides, it is also suitable for use in RF, low noise amplifier circuits, and other applications that require high frequency switching.

The core of BSC160N10NS3GATMA1 is the Basic Structure Unit (BSU), which includes an integrated insulated gate field-effect transistor. This BSU has a number of features, such as high switching speed, low on-resistance, high power density, high on-state current, low capacitance, low drive voltage, and low operating temperature.

As a voltage-controlled semiconductor switch, BSC160N10NS3GATMA1 needs a certain amount of electric current to turn on or turn off its switch. When a positive voltage is applied between its gate and source, a current passes through the channel and charges the gate. This, in turn, causes a voltage drop between the gate and the source. When the voltage drop is greater than the specified threshold voltage, the switch turns on and it allows a current to flow from source to drain. When the voltage between the gate and the source is decreased below the threshold level, the switch turns off and no current is allowed to pass through the channel.

As a voltage amplifier, BSC160N10NS3GATMA1 needs a certain input voltage to control its current output. When the input voltage increases, the current output also increases. The amplifier is used to amplify current or voltage signals. It can also be used as an impedance converter or impedance multiplier, which can convert a low-impedance signal into a high-impedance signal or vice versa.

BSC160N10NS3GATMA1 is an efficient, reliable, cost effective FET that can be used in a variety of applications. It has a low on-resistance and low gate charge, which makes it suitable for high frequency switching applications. Additionally, it has a low capacitance and low operating temperature, which makes it suitable for use in signaling and digital applications. This makes it a very versatile and popular choice for many power applications.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "BSC1" Included word is 29
Part Number Manufacturer Price Quantity Description
BSC160N15NS5ATMA1 Infineon Tec... 0.8 $ 1000 MOSFET N-CH 150V 56A 8TDS...
BSC110N06NS3GATMA1 Infineon Tec... -- 10000 MOSFET N-CH 60V 50A TDSON...
BSC100N10NSFGATMA1 Infineon Tec... -- 1000 MOSFET N-CH 100V 90A TDSO...
BSC120N03MSGATMA1 Infineon Tec... 0.16 $ 5000 MOSFET N-CH 30V 39A TDSON...
BSC100N03LSGATMA1 Infineon Tec... 0.0 $ 1000 MOSFET N-CH 30V 44A TDSON...
BSC120N03LSGATMA1 Infineon Tec... 0.16 $ 5000 MOSFET N-CH 30V 39A TDSON...
BSC109N10NS3GATMA1 Infineon Tec... -- 1000 MOSFET N-CH 100V 63A 8TDS...
BSC150N03LDGATMA1 Infineon Tec... 0.29 $ 1000 MOSFET 2N-CH 30V 8A 8TDSO...
BSC123N08NS3GATMA1 Infineon Tec... -- 30000 MOSFET N-CH 80V 55A TDSON...
BSC100N03MSGATMA1 Infineon Tec... 0.18 $ 1000 MOSFET N-CH 30V 44A TDSON...
BSC119N03S G Infineon Tec... -- 1000 MOSFET N-CH 30V 30A TDSON...
BSC190N12NS3GATMA1 Infineon Tec... 0.49 $ 1000 MOSFET N-CH 120V 44A TDSO...
BSC13DN30NSFDATMA1 Infineon Tec... 1.09 $ 1000 MOSFET N-CH 300V 16A 8TDS...
BSC123N10LSGATMA1 Infineon Tec... 0.58 $ 1000 MOSFET N-CH 100V 71A TDSO...
BSC110N15NS5ATMA1 Infineon Tec... 1.04 $ 1000 MOSFET N-CH 150V 76A 8TDS...
BSC106N025S G Infineon Tec... 0.0 $ 1000 MOSFET N-CH 25V 30A TDSON...
CV500-BSC11 Omron Automa... 0.0 $ 1000 BASIC MODULE RS232C/RS422...
BSC196N10NSGATMA1 Infineon Tec... 0.35 $ 1000 MOSFET N-CH 100V 45A TDSO...
BSC105N10LSFGATMA1 Infineon Tec... 1.15 $ 1000 MOSFET N-CH 100V 90A TDSO...
BSC100N06LS3GATMA1 Infineon Tec... -- 1000 MOSFET N-CH 60V 50A TDSON...
BSC152N10NSFGATMA1 Infineon Tec... 0.0 $ 1000 MOSFET N-CH 100V 63A TDSO...
BSC160N10NS3GATMA1 Infineon Tec... 0.34 $ 1000 MOSFET N-CH 100V 42A TDSO...
BSC117N08NS5ATMA1 Infineon Tec... 0.41 $ 1000 MOSFET N-CH 80V 49A 8TDSO...
BSC118N10NSGATMA1 Infineon Tec... 0.53 $ 5000 MOSFET N-CH 100V 71A TDSO...
BSC16DN25NS3GATMA1 Infineon Tec... 0.6 $ 1000 MOSFET N-CH 250V 10.9A 8T...
BSC190N15NS3GATMA1 Infineon Tec... -- 1000 MOSFET N-CH 150V 50A TDSO...
BSC12DN20NS3GATMA1 Infineon Tec... 0.37 $ 1000 MOSFET N-CH 200V 11.3A 8T...
BSC159N10LSFGATMA1 Infineon Tec... 0.8 $ 1000 MOSFET N-CH 100V 63A TDSO...
BSC130P03LSGAUMA1 Infineon Tec... 0.53 $ 1000 MOSFET P-CH 30V 22.5A TDS...
Latest Products
IRFL31N20D

MOSFET N-CH 200V 31A D2PAKN-Channel 200V...

IRFL31N20D Allicdata Electronics
IXTT440N055T2

MOSFET N-CH 55V 440A TO-268N-Channel 55V...

IXTT440N055T2 Allicdata Electronics
IXTH14N80

MOSFET N-CH 800V 14A TO-247N-Channel 800...

IXTH14N80 Allicdata Electronics
IXFT23N60Q

MOSFET N-CH 600V 23A TO-268(D3)N-Channel...

IXFT23N60Q Allicdata Electronics
IXTT72N20

MOSFET N-CH 200V 72A TO-268N-Channel 200...

IXTT72N20 Allicdata Electronics
IXFT9N80Q

MOSFET N-CH 800V 9A TO-268N-Channel 800V...

IXFT9N80Q Allicdata Electronics