
Allicdata Part #: | BSC16DN25NS3GATMA1TR-ND |
Manufacturer Part#: |
BSC16DN25NS3GATMA1 |
Price: | $ 0.60 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 250V 10.9A 8TDSON |
More Detail: | N-Channel 250V 10.9A (Tc) 62.5W (Tc) Surface Mount... |
DataSheet: | ![]() |
Quantity: | 1000 |
5000 +: | $ 0.53478 |
Vgs(th) (Max) @ Id: | 4V @ 32µA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | PG-TDSON-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 62.5W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 920pF @ 100V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 11.4nC @ 10V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 165 mOhm @ 5.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 10.9A (Tc) |
Drain to Source Voltage (Vdss): | 250V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The BSC16DN25NS3GATMA1 transistor is a single N-channel MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) device that is available in through hole package. This part has many aspects, including applications and working principle. This article will discuss the application field and working principle of the BSC16DN25NS3GATMA1.
Application Field
The BSC16DN25NS3GATMA1 transistor is an N-Channel transistor and is designed for high-speed switching applications. It is usually used in devices such as batteries, motors, amplifiers, modulators, digital circuits, and more. It can also be used as an amplifier, voltage regulator, and in PWM circuits. The BSC16DN25NS3GATMA1 is especially popular for its fast switching capability and its excellent temperature stability.
The BSC16DN25NS3GATMA1 is also very popular for its durability and current capacity. It is capable of carrying large current and thus is able to drive larger loads. This makes the BSC16DN25NS3GATMA1 ideal for motor, lighting, and power control applications. As the BSC16DN25NS3GATMA1 can operate over a wide temperature range, it is suitable for both industrial and automotive applications. It is also easy to use and thus can be used in many different applications.
Working Principle
The operation of the BSC16DN25NS3GATMA1 is based on an electric field. A gate is on top of the device. When a voltage is applied to the gate, it attracts electrons from the source and drain. This creates an electric field which modifies the resistance between the source and drain, allowing current to flow through the device.
The BSC16DN25NS3GATMA1 has a threshold voltage. This is the voltage that must be applied to the gate in order for the transistor to be activated and conduct current. When this voltage is applied, the electron density at the gate increases and the resistance between the source and drain decreases. This enables the current to flow through the device.
The BSC16DN25NS3GATMA1 is also capable of high-speed switching. This is because the electric field can be reversed quickly when the voltage on the gate is reversed. This feature allows the transistor to switch quickly between two states. The BSC16DN25NS3GATMA1 has excellent temperature stability, which means that it can operate over a wide temperature range without any problems.
Conclusion
The BSC16DN25NS3GATMA1 transistor is a single N-channel MOSFET device. Its main application is in high-speed switching applications, but it can also be used in amplifiers, voltage regulators, and PWM circuits. Its operation is based on an electric field, and it can switch quickly between two states. It is also capable of carrying large current, making it suitable for motor, lighting, and power control applications. Finally, its excellent temperature stability makes it suitable for industrial and automotive applications.
The specific data is subject to PDF, and the above content is for reference
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