BSC119N03S G

Vgs(th) (Max) @ Id:	2V @ 20µA
Package / Case:	8-PowerTDFN
Supplier Device Package:	PG-TDSON-8
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	2.8W (Ta), 43W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1370pF @ 15V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	11nC @ 5V
Series:	OptiMOS™
Rds On (Max) @ Id, Vgs:	11.9 mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	11.9A (Ta), 30A (Tc)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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BSC119N03S G application field and working principle

The BSC119N03S G is a vertical double-diffused metal-oxide semiconductor field-effect transistor (DMOSFET) device. It is developed by Infineon Technologies, a German semiconductor company, and has a wide range of applications.This DMOSFETs device provides high power density and low on-resistance performance, making it suitable for a variety of applications, including industrial, automotive, and consumer electronics. In addition, the device has a fast switching speed, low conduction losses, and a wide operating temperature range, making it ideal for many applications.The BSC119N03S G has three pins: anode, cathode and gate. The anode and cathode pins are connected to the source and drain of the device, respectively. The gate pin controls the current flow through the device.To understand how a DMOSFET works, we need to understand that when a voltage is applied to the gate pin, it creates a small electric field between the source and the drain electrodes. This electric field modulates the flow of electrons through the channel between the electrodes. The amount of current that can pass through the device is determined by the magnitude of the electric field created by the gate voltage.The BSC119N03S G is specifically designed for high-current, high-side switching applications, such as automotive battery management systems and industrial inverters. It is also suitable for other high-power applications, such as motor and solar controller drive, switching power supplies, and high-power lighting.The device features low on-resistance, fast switching speed, low gate charge and high maximum junction temperature, making it suitable for high-performance and high-temperature applications. It also has an integrated avalanche rated chip, allowing it to withstand large voltage variations without affecting its operation.The BSC119N03S G is a great choice for high-performance and high-power applications, due to its low on-resistance, fast switching speed, and wide operating temperature range. This device is a reliable and cost-effective solution for applications requiring high power and high performance.

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