BSC117N08NS5ATMA1 Allicdata Electronics

BSC117N08NS5ATMA1 Discrete Semiconductor Products

Allicdata Part #:

BSC117N08NS5ATMA1TR-ND

Manufacturer Part#:

BSC117N08NS5ATMA1

Price: $ 0.41
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 80V 49A 8TDSON
More Detail: N-Channel 80V 49A (Tc) 2.5W (Ta), 50W (Tc) Surface...
DataSheet: BSC117N08NS5ATMA1 datasheetBSC117N08NS5ATMA1 Datasheet/PDF
Quantity: 1000
5000 +: $ 0.37474
Stock 1000Can Ship Immediately
$ 0.41
Specifications
Vgs(th) (Max) @ Id: 3.8V @ 22µA
Package / Case: 8-PowerTDFN
Supplier Device Package: PG-TDSON-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 40V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Series: OptiMOS™
Rds On (Max) @ Id, Vgs: 11.7 mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The BSC117N08NS5ATMA1 is a single N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) that is used in a wide array of applications due to its size and high levels of performance. This MOSFET utilizes a 65-nm process node and is specifically manufactured to reduce power consumption while providing excellent switching performance. It is suitable for a variety of consumer, industrial, and automotive applications. Furthermore, the BSC117N08NS5ATMA1 MOSFET has a Gate Threshold voltage in the range of 3.6 V and its RDS(ONrn) value is incredibly low at 8.2 mΩ. The Metal Oxide Semiconductor Field Effect Transistor, or MOSFET, is a Voltage-controlled electronic component that uses a MOS capacitor as the gate terminal. This allows for a wide variety of applications, such as amplification, due to its ability to be turned "on" and "off" quickly and easily. This control of current and voltage is what makes MOSFETs so attractive in technological applications. The BSC117N08NS5ATMA1 MOSFET is primarily used as an amplifier, voltage regulator, or switch in both consumer and industrial applications. The MOSFET allows the user to control the current or voltage flowing through a component and is the cornerstone of many modern consumer, industrial, and automotive technologies. Its use in these varying industries is because of its low on-resistance (RDS(ON)) and low voltage gate threshold. In consumer applications, the BSC117N08NS5ATMA1 is often used as a switch or voltage regulator in high-end audio equipment, such as amplifiers and speakers. It is also used in consumer grade components such as computers, phones, and other electronics. It is incredibly useful in these consumer applications due to its high-performance and low voltage threshold. The BSC117N08NS5ATMA1 is also commonly used in industrial applications, such as LED drivers, power supplies, and power grids. It’s RDS(ON) value allows for a consistent electricity flow with minimal energy loss. Additionally, its low voltage threshold makes it perfect for construction and installation of solar panels, as well as other green energy applications. Furthermore, it is also an excellent choice for automotive applications in electric vehicles and hybrid cars, due to its reliability and efficient energy consumption. In conclusion, the BSC117N08NS5ATMA1 is a single N-channel MOSFET and is suitable for a variety of consumer, industrial, and automotive applications due to its size and wide range of abilities. Its efficient energy consumption and low voltage threshold make it a perfect choice for high-end audio equipment, LED drivers, and solar panels. This MOSFET is certain to be an essential part of the tech industry for many years to come.

The specific data is subject to PDF, and the above content is for reference

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