Allicdata Part #: | BSC152N10NSFGATMA1TR-ND |
Manufacturer Part#: |
BSC152N10NSFGATMA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 100V 63A TDSON-8 |
More Detail: | N-Channel 100V 9.4A (Ta), 63A (Tc) 114W (Tc) Surfa... |
DataSheet: | BSC152N10NSFGATMA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 72µA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | PG-TDSON-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 114W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1900pF @ 50V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 29nC @ 10V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 15.2 mOhm @ 25A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 9.4A (Ta), 63A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The BSC152N10NSFGATMA1 is a high-speed, high-temperature insulated-gate bipolar transistor (IGBT), typically used in power electronics applications such as motor control, lighting, and drives. IGBTs are the main type of transistor used in the power electronics industry due to their high speed, high temperature tolerance, low switching losses and high current capabilities, enabling them to handle heavy electrical loads and switch on and off rapidly for high power switching applications.
An IGBT is a three-terminal, insulated-gate bipolar transistor (IGBT), typically constructed from two N-channel and one P-channel MOSFETs in a single configuration. IGBTs are used in power applications in place of MOSFETs due to their improved switching speed, higher current capability, and superior thermal performance. An IGBT with an N-channel MOSFET and a P-channel MOSFET combines the best of both devices, allowing better control of on and off switching of power with higher efficiencies.
The BSC152N10NSFGATMA1 is a single-package IGBT module, featuring an insulated gate, a built-in temperature sensor, and a wide operating temperature range of -40°C to 150°C. Unlike single-piece isolated or multi-piece IGBTs, this device is designed for use in tightly packed power electronic applications where multiple power components are required. The module has a forward voltage drop of 2.5-3.5 V and can continuously handle up to 152 A at 10 V and 2 ms of pulse duration.
The working principle of the BSC152N10NSFGATMA1 is based on the IGBT\'s gate drive requirements. The gate drive is the voltage applied to the IGBT\'s gate terminal which controls the flow of current between the collector and emitter. In order for an IGBT to turn on, a large voltage must be applied to the gate, usually around 10 volts. This voltage turns on the transistor, allowing current to flow between the collector and emitter. To turn off the IGBT, the gate voltage must be significantly reduced from its on-state voltage, usually to 0 volts.
The BSC152N10NSFGATMA1 is designed for a broad range of industrial, automotive and consumer applications, such as high-power motor control, lighting, and drives. The device\'s fast switching speed make it well-suited for use in high frequency applications. The tight packaging of the module also makes it an ideal choice for use in densely packed power electronic systems, where multiple power components are required.
The BSC152N10NSFGATMA1 is a powerful and efficient device, which can be used in a variety of practical applications. With its fast switching speed, high current capability and wide operating temperature range, it is a reliable and energy-efficient choice for many power electronics applications.
The specific data is subject to PDF, and the above content is for reference
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