BSC123N10LSGATMA1

Vgs(th) (Max) @ Id:	2.4V @ 72µA
Package / Case:	8-PowerTDFN
Supplier Device Package:	PG-TDSON-8
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	114W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	4900pF @ 50V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	68nC @ 10V
Series:	OptiMOS™
Rds On (Max) @ Id, Vgs:	12.3 mOhm @ 50A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	10.6A (Ta), 71A (Tc)
Drain to Source Voltage (Vdss):	100V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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BSC123N10LSGATMA1 is a Metal-Oxide Semiconductor Field Effect Transistor (MOSFET) with a single N-channel design. The device is specifically designed for high voltage, high current and low gate charge operation in applications such as motor control, high power switching, lighting control and server power supply.

A Metal-Oxide Semiconductor Field Effect Transistor (MOSFET) is a specialized semiconductor device that is used to control the current and voltage flow within a circuit. Unlike traditional transistors, MOSFETs are “self-contained” devices and require no external components for control or operation. As such, MOSFETs are commonly used for high power switching and linear power applications. The BSC123N10LSGATMA1 is no different, and is designed to provide high efficiency and improved signal conditioning.

The BSC123N10LSGATMA1 is designed to handle a maximum drain-source voltage of 1200V and a maximum continuous drain current of 10A. The device has a typical maximum junction temperature rating of 175°C, with a drain-source On-resistance rating of 4.2mΩ. The device also has a maximum gate charge of 18nC. In addition, the device also includes integrated protection features such as avalanche ruggedness, Body Diode and Zener diodes for over current protection. All of these features combine to make the BSC123N10LSGATMA1 an ideal solution for high power switching and linear applications.

In practical applications, the BSC123N10LSGATMA1 can be used in a variety of scenarios. The device can be used to control the speed and power of motors in industrial equipment, or to switch on/off lighting fixtures in large buildings. The device can also be used in server power supplies to increase efficiency while providing reliable and safe operation. In each of these applications, the MOSFET’s low gate charge and integrated protection features ensure that the device operates safely and efficiently.

The working principle of a MOSFET is based on the use of a gate voltage that controls the source-drain current. This voltage is applied to a thin metal-oxide layer that is placed between the source and drain of the MOSFET. The gate voltage creates an electric field which attracts the charge carriers (electrons or holes) from the source to the drain, thus allowing current to flow from the source to the drain of the MOSFET. As the amount of gate voltage increases, the amount of current that can flow from the source to the drain of the MOSFET also increases.

In summary, the BSC123N10LSGATMA1 is a single N-channel MOSFET device specifically designed for applications such as motor control, high power switching and lighting control. The device is able to handle a maximum drain-source voltage of 1200V, has a typical maximum junction temperature rating of 175°C and has a drain-source on-resistance rating of 4.2mΩ. The device also includes integrated protection features such as avalanche ruggedness, body diode and Zener diodes for over current protection. All of these features combine to make the BSC123N10LSGATMA1 an ideal solution for high power switching and linear applications.

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