BTS244Z E3062A

Vgs(th) (Max) @ Id:	2V @ 130µA
Package / Case:	TO-263-5, D²Pak (4 Leads + Tab), TO-263BB
Supplier Device Package:	PG-TO220-5-62
Mounting Type:	Surface Mount
Operating Temperature:	-40°C ~ 175°C (TJ)
Power Dissipation (Max):	170W (Tc)
FET Feature:	Temperature Sensing Diode
Input Capacitance (Ciss) (Max) @ Vds:	2660pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	130nC @ 10V
Series:	TEMPFET®
Rds On (Max) @ Id, Vgs:	13 mOhm @ 19A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	35A (Tc)
Drain to Source Voltage (Vdss):	55V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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BTS244Z E3062A Application Field and Working Principle

The BTS244Z E3062A is a N-channel enhancement mode Field-Effect Transistor (FET) that is used for many different purposes. It is a versatile and reliable device for power management and control applications. The BTS244Z E3062A features low-on-state resistance and is suitable for high-side switching applications. This device is available in a variety of packages and is an excellent choice for a wide range of applications.

Overview

FETs are semiconductor devices that are used to control electrical signals. They are found in all types of electronic systems, including laptops, cell phones and other portable devices. FETs are commonly used as switches and amplifiers.The BTS244Z E3062A is a N-channel enhancement mode FET that is used to switch and control signals. The device contains two terminals - the gate and the source. The gate is used to control the flow of electrons through the device and the source supplies the electrons to the device. The drain is where the electrons leave the device. The BTS244Z E3062A is constructed from silicon, making it highly reliable and cost-effective. It is capable of operating at high temperatures and consuming very low power. The device is usually packaged in either a TO-251 or D2PAK package.

Applications

FET technology can be used for a wide range of applications, including power management and control. The BTS244Z E3062A is suitable for high power switching applications and can be used in a variety of ways. Here are the most common types of applications:

• Power Control: The BTS244Z E3062A is a suitable device for power control applications. It can be used to switch power on and off and also to regulate current. The device is capable of switching large currents (up to 25A) with low electrical losses.
• Power Management: The BTS244Z E3062A is well suited for power management applications. It can be used to regulate the current and activate or deactivate the output. The device is reliable and efficient.
• Motor Control: The BTS244Z E3062A is suitable for motor control applications. It can be used to regulate the speed and direction of the motor and protect it from mechanical and electrical wear. The device is capable of working with large currents and is highly reliable.
• Analog Switch: The BTS244Z E3062A can be used as an analog switch. It can be used to switch between multiple devices and control the analog output of the system. The device is highly stable and reliable.
• High-side Switching: The BTS244Z E3062A is an ideal device for high-side switching applications. It can be used to switch voltage levels, drive loads and control current flow. The device is cost-effective and efficient.

Working Principle

The BTS244Z E3062A is a metal oxide semiconductor field-effect transistor (MOSFET). It is constructed from silicon, making it highly reliable and cost-effective. The operation of the FET is based on the principles of electron flow. The FET consists of three terminals: the gate, the source and the drain. The gate is used to control the flow of electrons through the device and the source supplies the electrons to the device. The drain is where the electrons leave the device. The gate is electrically isolated from the other two terminals. By applying a voltage to the gate, the electrons are attracted to it and the conductivity of the device increases. As the current flows through the device, the voltage applied to the gate increases and the conduction of the device decreases. This is called the “gate-source voltage” or the “gate-drain voltage”. By controlling this gate-source voltage, the current through the FET can be controlled. The gate-source voltage can be adjusted by changing the amount of voltage applied to the gate. This allows the FET to act as an amplifier and switch.

Conclusion

The BTS244Z E3062A is a N-channel enhancement mode Field-Effect Transistor (FET) that is used for many different purposes. It is a versatile and reliable device for power management and control applications. The device is constructed from silicon, making it highly reliable and cost-effective.The BTS244Z E3062A is capable of switching large currents (up to 25A) with low electrical losses. It is suitable for high power switching applications and can be used in a variety of ways. The device is well suited for power management applications and can also be used as an analog switch and for motor control.The operation of the BTS244Z E3062A is based on the principles of electron flow. The gate is used to control the flow of electrons through the device and the source supplies the electrons to the device. By controlling this gate-source voltage, the current through the FET can be controlled.

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