Allicdata Part #: | BTS244ZNKSA1-ND |
Manufacturer Part#: |
BTS244ZNKSA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 55V 35A TO220-5 |
More Detail: | N-Channel 55V 35A (Tc) 170W (Tc) Through Hole PG-T... |
DataSheet: | BTS244ZNKSA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2V @ 130µA |
Package / Case: | TO-220-5 Formed Leads |
Supplier Device Package: | PG-TO220-5-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -40°C ~ 175°C (TJ) |
Power Dissipation (Max): | 170W (Tc) |
FET Feature: | Temperature Sensing Diode |
Input Capacitance (Ciss) (Max) @ Vds: | 2660pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 130nC @ 10V |
Series: | TEMPFET® |
Rds On (Max) @ Id, Vgs: | 13 mOhm @ 19A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 35A (Tc) |
Drain to Source Voltage (Vdss): | 55V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The BTS244ZNKSA1 is an advanced single N-channel Logic Level Enhancement Mode Field-Effect Transistor (FET) which is designed for use in low voltage and low current applications. It is a logic level MOSFET, allowing it to be used in applications that require high input current capability as well as a low input voltage threshold. The BTS244ZNKSA1 has a maximum drain source voltage ratings of 30V, allowing it to be used in a variety of applications.
Application Field: The BTS244ZNKSA1 is an ideal choice for applications requiring low on-resistance and increased transconductance. Due to its logic level, it can be used in applications that require high input current capability and a low input voltage threshold. This makes it suitable for applications like switch mode power supplies, low-noise switching systems and drivers, sensor interface and SMPS.
Working Principle: The BTS244ZNKSA1 is a field-effect transistor (FET) which utilizes a gate-to-source voltage to control the current flow through a drain-to-source channel. When the gate-to-source voltage is applied and the gate electrode has a negative potential than the source, electrons are driven from the source region to a channel created between source and drain. This allows for current to flow through the channel. If a negative gate-to-source voltage is applied, the electrons are driven to a depletion region surrounding the source which prevents current from flowing. This is how the BTS244ZNKSA1 is able to provide the reduced on-resistance and increased transconductance.
The BTS244ZNKSA1 is designed to use the latest in process technology, allowing it to remain in a low-power state while still providing excellent performance. It provides an on-resistance which is up to 30% lower than comparable products, resulting in greater efficiency and faster switching. The device also features gate-to-source charge injection of 100pC, making it ideal for use in high-speed applications with relatively low harmonics.
The BTS244ZNKSA1 features a low leakage current of 100nA and a maximum operating temperature of 150°C. This makes it suitable for a wide range of operations including automotive, consumer, industrial, and telecom applications. Its small package size and low power consumption also make it ideal for portable devices.
The BTS244ZNKSA1 is a highly versatile transistor offering excellent performance and providing a low-cost solution for a variety of applications. With its ability to reduce on-resistance and increase transconductance, it is an ideal choice for low-voltage and low-current applications requiring high input current capability as well as a low input voltage threshold.
The specific data is subject to PDF, and the above content is for reference
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