BTS244ZNKSA1 Allicdata Electronics
Allicdata Part #:

BTS244ZNKSA1-ND

Manufacturer Part#:

BTS244ZNKSA1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 55V 35A TO220-5
More Detail: N-Channel 55V 35A (Tc) 170W (Tc) Through Hole PG-T...
DataSheet: BTS244ZNKSA1 datasheetBTS244ZNKSA1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2V @ 130µA
Package / Case: TO-220-5 Formed Leads
Supplier Device Package: PG-TO220-5-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Power Dissipation (Max): 170W (Tc)
FET Feature: Temperature Sensing Diode
Input Capacitance (Ciss) (Max) @ Vds: 2660pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
Series: TEMPFET®
Rds On (Max) @ Id, Vgs: 13 mOhm @ 19A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The BTS244ZNKSA1 is an advanced single N-channel Logic Level Enhancement Mode Field-Effect Transistor (FET) which is designed for use in low voltage and low current applications. It is a logic level MOSFET, allowing it to be used in applications that require high input current capability as well as a low input voltage threshold. The BTS244ZNKSA1 has a maximum drain source voltage ratings of 30V, allowing it to be used in a variety of applications.

Application Field: The BTS244ZNKSA1 is an ideal choice for applications requiring low on-resistance and increased transconductance. Due to its logic level, it can be used in applications that require high input current capability and a low input voltage threshold. This makes it suitable for applications like switch mode power supplies, low-noise switching systems and drivers, sensor interface and SMPS.

Working Principle: The BTS244ZNKSA1 is a field-effect transistor (FET) which utilizes a gate-to-source voltage to control the current flow through a drain-to-source channel. When the gate-to-source voltage is applied and the gate electrode has a negative potential than the source, electrons are driven from the source region to a channel created between source and drain. This allows for current to flow through the channel. If a negative gate-to-source voltage is applied, the electrons are driven to a depletion region surrounding the source which prevents current from flowing. This is how the BTS244ZNKSA1 is able to provide the reduced on-resistance and increased transconductance.

The BTS244ZNKSA1 is designed to use the latest in process technology, allowing it to remain in a low-power state while still providing excellent performance. It provides an on-resistance which is up to 30% lower than comparable products, resulting in greater efficiency and faster switching. The device also features gate-to-source charge injection of 100pC, making it ideal for use in high-speed applications with relatively low harmonics.

The BTS244ZNKSA1 features a low leakage current of 100nA and a maximum operating temperature of 150°C. This makes it suitable for a wide range of operations including automotive, consumer, industrial, and telecom applications. Its small package size and low power consumption also make it ideal for portable devices.

The BTS244ZNKSA1 is a highly versatile transistor offering excellent performance and providing a low-cost solution for a variety of applications. With its ability to reduce on-resistance and increase transconductance, it is an ideal choice for low-voltage and low-current applications requiring high input current capability as well as a low input voltage threshold.

The specific data is subject to PDF, and the above content is for reference

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