Allicdata Part #: | BTS244ZE3043AKSA2-ND |
Manufacturer Part#: |
BTS244ZE3043AKSA2 |
Price: | $ 1.90 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 55V 35A TO220-5 |
More Detail: | N-Channel 55V 35A (Tc) 170W (Tc) Surface Mount PG-... |
DataSheet: | BTS244ZE3043AKSA2 Datasheet/PDF |
Quantity: | 1000 |
500 +: | $ 1.71237 |
Series: | TEMPFET® |
Packaging: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 55V |
Current - Continuous Drain (Id) @ 25°C: | 35A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 13 mOhm @ 19A, 10V |
Vgs(th) (Max) @ Id: | 2V @ 130µA |
Gate Charge (Qg) (Max) @ Vgs: | 130nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 2660pF @ 25V |
FET Feature: | Temperature Sensing Diode |
Power Dissipation (Max): | 170W (Tc) |
Operating Temperature: | -40°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | PG-TO220-5-12 |
Package / Case: | TO-220-5 |
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The BTS244ZE3043AKSA2 is a single N-channel enhancement-mode Field Effect Transistors (FETs) made using a vertical double-diffused MOSFET process. This high voltage FET is specifically designed for use in low-frequency, switch mode applications.
The BTS244ZE3043AKSA2 is suitable for high efficiency and low power consumption, featuring low gate charge, low gate resistance and low thermal resistance, allowing for improved performance and extended battery operating time. The device also offers low temperature performance, high voltage, low output capacitance and excellent switching characteristics.
Application Field
The BTS244ZE3043AKSA2 is widely used in a variety of industrial and consumer applications, such as power supplies, inverters, motor control systems and high-frequency switching, among others. It is also well-suited for low-voltage switching in renewable energy applications, such as photovoltaic installations, solar systems and wind turbines.
The BTS244ZE3043AKSA2 is also used in applications where low power consumption and low-frequency operation are important. It is also a suitable choice for low-power, high-efficiency switching and for safety applications, due to its low reverse leakage current and low gate-source voltage.
Working Principle
The BTS244ZE3043AKSA2 is a type of MOSFET, and thus follows the typical working principle for a MOSFET. It consists of a source, drain and gate electrodes, as well as a substrate. The substrate is normally p-type, and the source and drain are composed of n-type material.
The principle of operation can best be explained by the electric field effect. When a voltage is applied to the gate electrode, an electric field is created between the drain and source, resulting in an accumulation of charge carriers at the drain side. These charge carriers form an inversion layer at the drain contact, which is responsible for the actual conduction.
The BTS244ZE3043AKSA2 is capable of both enhancement-mode and depletion-mode operations, depending on the polarity of the voltage applied to the gate electrode. It is typically operated in enhancement-mode, meaning that the channel is abolished until it is opened by the application of a voltage.
Conclusion
In conclusion, the BTS244ZE3043AKSA2 is a high-voltage FET, specifically designed for use in low-frequency, switch mode applications, such as power supplies, inverters and motor control systems. It offers low gate charge, low gate resistance, low thermal resistance and low reverse leakage current, making it an excellent choice for applications where low power consumption and low-frequency operation are important. The device is also suitable for high efficiency switching and safety applications.
The specific data is subject to PDF, and the above content is for reference
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