BTS247ZE3062AATMA2

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The BTS247ZE3062AATMA2 is a high current simple, low RDS(ON), logic-level, n-channel Enhancement Mode MOSFET from EICRF. It has been designed to minimize on-state resistance while maintaining superior switching performance, making it ideal for use in high current switch mode applications. This MOSFET is ideally suited for consumer and industrial applications such as industrial automation, power supplies, motor drives, and lighting.

The BTS247ZE3062AATMA2 MOSFET has an operating temperature range of -40°C to +175°C. It has an on-state Drain-Source resistance of 0.0030 Ω with a continuous current rating of up to 30 A (lower at higher temperatures), and a drain-source breakdown voltage rating of 30 V. It is able to switch at frequencies up to 1 MHz.

The BTS247ZE3062AATMA2 is a single-MOSFET with an N-Channel. This type of device uses a voltage applied to the gate terminal to control the flow of current from the drain to the source. When the voltage applied to the gate is below the threshold voltage (Vth), the current is blocked from flowing. When the voltage applied to the gate is above the threshold voltage, the current can flow. This is known as Enhancement Mode, or E-Mode, MOSFET.

The BTS247ZE3062AATMA2 is a low RDS(ON), logic-level MOSFET. The logic-level refers to the need for the voltage of the gate terminal to be able to move the threshold voltage (Vth) up and down in order to control the flow switch on and off. So, a logic-level MOSFET needs to have a threshold voltage that can be operated with Voltages of between 0 and 5 Volts.

The BTS247ZE3062AATMA2 has a maximum RDS(ON) of 0.0030 Ω. This is very low compared to MOSFETs with higher RDS(ON) values, making the BTS247ZE3062AATMA2 an ideal choice for applications needing high levels of efficiency. In addition, the low RDS(ON) makes the BTS247ZE3062AATMA2 suitable for high current switch-mode applications, such as motor drives, lighting, and power supplies.

The BTS247ZE3062AATMA2 MOSFET is ideal for use in a variety of applications, including industrial automation, power supplies, motor drives, and lighting. This is due to its low on-state resistance (RDS(ON)) and relatively low threshold voltage (Vth). The BTS247ZE3062AATMA2 is also capable of switching at frequencies up to 1 MHz, making it ideal for use in high speed circuits.

The BTS247ZE3062AATMA2’s low RDS(ON) makes it suitable for use in applications requiring high levels of efficiency. Its high continuous current rating of 30 A (lower at higher temperatures) makes it well-suited for high current switching applications. The device is able to operate over a wide temperature range (-40°C to +175°C). In addition, the BTS247ZE3062AATMA2 has a relatively low threshold voltage (Vth), making it ideal for use in logic-level circuits.

In conclusion, the BTS247ZE3062AATMA2 is a high current simple, low RDS(ON) MOSFET. Its logic-level capability, wide temperature range, and low RDS(ON) make it suitable for use in a variety of applications, including industrial automation, power supplies, motor drives, and lighting. Its high continuous current rating of 30 A (lower at higher temperatures) and its ability to switch at frequencies up to 1 MHz make it ideal for high speed, high current switch-mode applications.

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