BTS247ZAKSA1

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BTS247ZAKSA1 is an N-channel enhancement-mode vertical D-MOS transistor designed specifically for audio and low-voltage applications. As part of the BTS series from STMicroelectronics, this transistor is specifically designed to provide maximum performance and stability, while also meeting stringent environmental and regulatory standards. The transistor is available in both a 4-pin SOT223 and 6-pin SOT563 package.

The BTS247ZAKSA1 transistor is suitable for many general purpose applications such as: audio amplifiers, switches, power supplies, motor control circuits, LED switching, and other low-power logic. It features a drain-source breakdown voltage of 600 volts, a gate-source breakdown voltage of 25 volts, and is rated to withstand a maximum drain current of 12 amps. Additionally, the transistor has a maximum drain-source on-resistance of 0.8 ohms.

The BTS247ZAKSA1 is an N-channel MOSFET (metal–oxide–semiconductor field-effect transistor). The transistor uses an insulated gate that is held at a certain voltage to control its flow of electrons. An electric charge carrier will form at the surface of the channel near the drain-source junction when the gate voltage is applied. The electron channel created is henceforth referred to as the “inversion layer”. This inversion layer allows for voltage-controlled conduction between the source and drain, as the lattice structure, formed due to the presence of the inversion layer, significantly decreases the resistance between the source and drain.

The BTS247ZAKSA1 can be advantageous in applications with high power consumption, since it offers a very low on-state resistance. The low power consumption of the transistor, as well as its low reverse leakage characteristics, make it useful in automotive and power electronics applications, where power losses and emissions need to be minimized. Additionally, it is immune to electro-magnetic interference, and is rated to withstand high temperature operation. The BTS247ZAKSA1 is also designed for superior reliability due to its low gate-drain and gate-source capacitances, enabling the use of many zero-volt memories and logic circuits.

The BTS247ZAKSA1 is especially suited for applications where low on-state loss is essential. For example, it can be used in switching power supplies, motor controls, rectifiers, and audio amplifiers. It can be coupled with other power devices to create a wide variety of complex switching applications. The low on-state resistance ensures less power loss, allowing for cooler operation and higher efficiency. Additionally, the transistor can also be used to output a low-noise signal, due to its low gate-drain and gate-source capacitance.

Because the BTS247ZAKSA1 is a single FET, it is designed for single-ended applications. It is not recommended for use in push-pull or half-bridge circuits. All of the components and substrate must be properly matched for optimum performance in any application. It is important to ensure that the environment, application, and operating temperature is within the recommended rating for the device.

In conclusion, the BTS247ZAKSA1 is an N-channel MOSFET transistor, specifically designed for audio and low-voltage applications. Its low on-state resistance, low gate-drain and gate-source capacitances, and high voltage and temperature ratings make it especially suited for applications with high power consumption. The transistor is not suitable for use in push-pull or half-bridge circuits. Its environmental and regulatory standards make it a reliable power device in automotive and power electronics applications.

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