BTS244ZE3062AATMA2

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BTS244ZE3062AATMA2 is a robust, high current and voltage drive N-channel enhancement mode MOSFET. It has a 30V gate drive and a maximum drain current of 62A, making it an ideal choice for low on-state resistance and superior switching performance. It is suitable for a wide range of applications, including motor control, DC/DC converters, high-power LED driver, mobile and industrial power supplies, HVAC controllers, and more.

Application Field

BTS244ZE3062AATMA2 is used in a variety of applications due to its remarkably low switching resistance (RDS(ON)) and gate threshold voltage (VGS). In automotive applications, it can be used for central locking and parking brake controls, as well as switch matrix motors used in car navigation systems. It can also be used in HVAC systems to drive relays and other motor control functions. In consumer electronics, it is used for DC/DC converters, LED lighting, and sound systems.

In the field of power electronics, BTS244ZE3062AATMA2 is used to drive the motor in industrial equipment, as well as to regulate the power supply to a variety of components. It can be used in improved motor control, such as precision motor control, sensorless brushless DC (BLDC) motor control, and high voltage motor control. It is also suitable for switch mode power supply (SMPS) and AC/DC power converters. It can also be used to improve the heat dissipation of power supply modules.

Working Principle

BTS244ZE3062AATMA2 is an N-channel enhancement mode MOSFET, which means that it utilizes the control action of the gate voltage to regulate the current flow of the drain and source terminals. To turn the MOSFET on, an appropriate voltage is applied to the gate. This causes the region near the gate to become increasingly conductive, allowing an electric current to pass through the drain and source terminals. To turn the MOSFET off, the gate voltage is reduced or set to zero. This causes the area near the gate to become increasingly resistive, preventing electric current from flowing.

When the MOSFET is in the off-state, the body diode allows current to pass from the drain to the source. The body diode is essentially a P-channel MOSFET, which means that the diode junction itself creates its own voltage drop, perhaps reducing the efficiency of the circuit when compared to operating without a body diode.

BTS244ZE3062AATMA2 has a maximum drain current of 62A and a maximum drain-source voltage of 30V, making it suitable for high current applications. The device also features a low internal gate resistance and a low gate threshold voltage, which helps reduce the power dissipation when driving the device.

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