BTS247Z E3062A Allicdata Electronics
Allicdata Part #:

BTS247ZE3062A-ND

Manufacturer Part#:

BTS247Z E3062A

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 55V 33A TO220-5
More Detail: N-Channel 55V 33A (Tc) 120W (Tc) Surface Mount PG-...
DataSheet: BTS247Z E3062A datasheetBTS247Z E3062A Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2V @ 90µA
Package / Case: TO-263-5, D²Pak (4 Leads + Tab), TO-263BB
Supplier Device Package: PG-TO263-5-2
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Power Dissipation (Max): 120W (Tc)
FET Feature: Temperature Sensing Diode
Input Capacitance (Ciss) (Max) @ Vds: 1730pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
Series: TEMPFET®
Rds On (Max) @ Id, Vgs: 18 mOhm @ 12A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The BTS247Z E3062A is a high-performance low-on resistance automotive-grade N-channel power MOSFET. This device is designed to deliver superior power conversion efficiency and presents an ideal solution for automotive and consumer electronics applications. With a breakdown voltage of 40V and a continuous current handling capability of 10A, it is suitable for a wide range of applications including driver, load switch, and low-noise amplifier. The device also features high-speed switching, extremely low gate charge, and robust ESD protection up to 2kV.

The BTSF247Z E3062A operates in the enhancement mode of operation and has an N-channel construction. It is constructed using trench technology, which offers superior electrical performance and low-on resistance. This device features a low threshold voltage and excellent RDS(ON) which enables a high degree of efficiency when operating under high frequencies and higher temperatures. Furthermore, its internal structure provides superior ruggedness even under high dV/dt stress. It is suitable for low voltage switching of power in a variety of electronic applications.

In terms of its operation, the BTS247Z E3062A functions as a power switch by allowing the current to flow through the channel when a voltage is applied between the gate and source. A positive voltage between the gate and source causes the MOSFET to open up and a current to flow through the channel while a negative voltage between the gate and source causes the MOSFET to shut off and no current to flow through the channel.

Moreover, the BTS247Z E3062A also enables protection against excessive voltage. It is designed to handle negative gate-to-source voltage and includes a drain-source avalanche breakdown clamp for overload protection. This device is also suitable for low-noise amplifier applications due to its low noise figure and high common-mode input range.

In conclusion, the BTS247Z E3062A presents a cost-effective solution for low-voltage power conversion applications. With its strong ruggedness, robust ESD protection, and superior electrical performance, it is ideal for automotive, industrial, and consumer electronics.

The specific data is subject to PDF, and the above content is for reference

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