BTS282Z E3230

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The BTS282Z E3230 is a N-channel enhancement mode MOSFET designed primarily to switch applications. This device is designed to be used as a high-side switch utilizing the bulk power supply. As a high-side switch, controllable current is enabled to be passed to the load, without ramping up the gate voltage above the power supply voltage. Therefore, the input requirement of the load remains the same as the power supply voltage.

MOSFET’s are four-terminal devices. The four terminals include the drain, source, gate, and bulk. When the MOSFET is used in an enhancement mode device, the electrodes are held in an off state when the gate is at 0 volts and conduct when a positive voltage is applied to the gate. This design provides for a low on-state resistance and very low gate drive power requirements.

The BTS282Z E3230 is specifically designed for use with automotive and industrial applications. Its primary purpose is to be used as a high-side switch in order to control a variety of loads. This device is designed to be used in a wide range of DC/DC converter applications, such as voltage regulation, power management, and smart battery chargers. The BTS282Z E3230 is also capable of operating with load currents ranging from 100mA to 12A. It can also handle an avalanche energy of up to 15A.

The BTS282Z E3230 features an integral protection circuitry to provide an extra level of protection against ESD, EMI, and transient over-voltages. This feature provides a significant advantage in reliability, especially when used in harsh environments and high power applications. Additionally, the BTS282Z E3230 offers extended lifetime performance due to its dynamic Device Redundancy Circuitry (DRC) which enhances the thermal stability and protects against ESD.

The working principle of the BTS282Z E3230 is based on the principle of enhancement mode MOSFETs. This type of MOSFETs has an insulated gate electrode. When the gate voltage is applied, the electrons are attracted to the gate electrode and move to the source to form an inversion channel between the source and drain terminals. This inversion channel enhances the conductivity of the N-channel MOSFET and allows for current to flow from the source to the drain when the device is turned on. The N-channel MOSFET is thus used to switch the load from the off state to the on state.

In summary, the BTS282Z E3230 is a N-channel enhancement mode MOSFET designed primarily to switch applications. It is designed for use with automotive and industrial applications, providing an extra level of protection against ESD, EMI, and transient over-voltages. The working principle of this device is based on the principle of enhancement mode MOSFETs, which enables current to flow from the source to the drain when the device is turned on. This device is an ideal choice for a wide range of DC/DC converter applications, such as voltage regulation, power management, and smart battery chargers.

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