Allicdata Part #: | C3M0030090K-ND |
Manufacturer Part#: |
C3M0030090K |
Price: | $ 21.34 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Cree/Wolfspeed |
Short Description: | ZFET 900V, 30 MOHM, G3 SIC MOSFE |
More Detail: | N-Channel 900V 63A (Tc) 149W (Tc) Through Hole TO-... |
DataSheet: | C3M0030090K Datasheet/PDF |
Quantity: | 1000 |
1 +: | $ 19.40400 |
Gate Charge (Qg) (Max) @ Vgs: | 87nC @ 15V |
Package / Case: | TO-247-4 |
Supplier Device Package: | TO-247-4L |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 149W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1864pF @ 600V |
Vgs (Max): | +15V, -4V |
Series: | C3M™ |
Vgs(th) (Max) @ Id: | 3.5V @ 11mA |
Rds On (Max) @ Id, Vgs: | 39 mOhm @ 35A, 15V |
Drive Voltage (Max Rds On, Min Rds On): | 15V |
Current - Continuous Drain (Id) @ 25°C: | 63A (Tc) |
Drain to Source Voltage (Vdss): | 900V |
Technology: | SiCFET (Silicon Carbide) |
FET Type: | N-Channel |
Part Status: | Active |
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C3M0030090K is developed by Infineon Technologies, a prominent player in the field of semiconductor industry. It is a passive three terminal pin-out device, especially designed for low thresold voltage applications. The device features excellent ESD performance, fast switching speed and competitive on-resistance. In terms of caracteristics, C3M0030090K has a drain-source voltage of 900 V, gate-source voltage of ±20 V, and a drain current of 30 A. It also has a low on-state resistance, which makes it suitable for switching high current loads.
C3M0030090K is mainly used in automotive power converters, DC-DC converters, telecom and other industrial electronics applications, including:
- Torquemotor control applications
- Motor driver applications requiring high switching frequency
- High current driver applications
- High power and efficiency applications
C3M0030090K is part of a large family of Semiconductor power modules offered by Infineon. As a field-effect transistor (FET), the device has three terminals, namely the gate (G), drain (D) and source (S). It is an N-channel device with a built-in resistor connected between gate and source, and extended drain for dissipating heat to ensure long-term reliability and improve the thermal performance.
C3M0030090K works on the principle of \'capacitance run-up\'. This is a low resistance process where the current flows from source to drain without the need for voltage applied to the gate. This allows electrons to move easily between the source and drain and increases the switching speed of the device, making it ideal for high speed applications.
C3M0030090K uses the latest nitride feature to enhance the reliability of the device. This nitride feature provides better gate capacitance control, improved breakdown voltage and better ESD performance. It also offers excellent RDSon-Vgs characteristics that keep the on-state resistance low and stable even in harsh operating conditions. The high current ratings of the device also make it suitable for high power applications.
In conclusion, C3M0030090K is an ideal choice for automotive and telecom applications where switching efficiency and speed is essential. The device offers a great value proposition with its low on-resistance and high current ratings, making it the perfect choice for high power and high speed applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
C3M0030090K | Cree/Wolfspe... | 21.34 $ | 1000 | ZFET 900V, 30 MOHM, G3 SI... |
C3M0120090D | Cree/Wolfspe... | 4.68 $ | 1000 | 900V, 120 MOHM, G3 SIC MO... |
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