Allicdata Part #: | C3M0280090J-ND |
Manufacturer Part#: |
C3M0280090J |
Price: | $ 2.66 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Cree/Wolfspeed |
Short Description: | MOSFET N-CH 900V 11A |
More Detail: | N-Channel 900V 11A (Tc) 50W (Tc) Surface Mount D2P... |
DataSheet: | C3M0280090J Datasheet/PDF |
Quantity: | 1000 |
1 +: | $ 2.41920 |
Vgs(th) (Max) @ Id: | 3.5V @ 1.2mA |
Package / Case: | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
Supplier Device Package: | D2PAK-7 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 50W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 150pF @ 600V |
Vgs (Max): | +18V, -8V |
Gate Charge (Qg) (Max) @ Vgs: | 9.5nC @ 15V |
Series: | C3M™ |
Rds On (Max) @ Id, Vgs: | 360 mOhm @ 7.5A, 15V |
Drive Voltage (Max Rds On, Min Rds On): | 15V |
Current - Continuous Drain (Id) @ 25°C: | 11A (Tc) |
Drain to Source Voltage (Vdss): | 900V |
Technology: | SiCFET (Silicon Carbide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The C3M0280090J is a high-speed insulated gate bipolar transistor (IGBT) module with a 1200V/900A device. It is a 3-terminal power semiconductor device with a strong insulation structure and low stray inductance, which makes it a suitable choice for many high-frequency power conversion applications. It is designed for use in those applications that require a high switching frequency, high current, and high-voltage operation.
C3M0280090J belongs to the category of transistors and field-effect transistors (FETs) with a single MOSFET (CMOS). It is designed to operate between the drain and source potentials and requires a certain gate voltage for proper operation. When a gate voltage is applied, the drain-source channel is opened, thus allowing current to flow. When the gate voltage is removed, the drain-source channel is closed and no current can flow.
The C3M0280090J is well-suited for use in applications that require a high degree of energy efficiency, such as those related to motor control and motor drive, because it can deliver up to 900A while operating on a gate voltage of 5V. It is also suitable for use in power conversion applications such as power supply, UPS, and inverter systems. This module can be used to build efficient switching devices that can convert AC voltages to DC voltages, generate high-frequency AC signals, and perform high-efficiency rectification and switching.
In addition, the C3M0280090J provides excellent performance in terms of switching speed, switching loss, and thermal dissipation. It features a very low on-resistance (Ron) of only 4.6 milliohms and a very high forward blocking voltage of 1200V. It is also equipped with a high current capacity of 900A and a fast switching speed of up to 30kHz.
The C3M0280090J can be used in applications that demand high efficiency and power density, including power converters, motor controllers, and other SMPS (switched mode power supply) systems. It is also suitable for use in various industrial control applications, such as welding and plasma cutting machines.
Overall, the C3M0280090J is an ideal choice for applications that require high-speed, high-current operation, high efficiency, and high power density. Its ability to provide high current ratings and low switching losses makes it suitable for those applications that require high frequency switching and performance.
The specific data is subject to PDF, and the above content is for reference
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