C3M0065090J-TR

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The C3M0065090J-TR is a high-performance N-channel, Trench MOSFET designed for use in medium- and high-voltage applications. It has a drain-source voltage of 650 V, a drain-drain current of 240 A and a maximum operating temperature of 175 deg. C.

The C3M0065090J-TR is a perfect MOSFET for switching and power management applications. Its internal structure is based on TrenchMOS technology, which ensures high operating efficiency and steady-state power loss ratings at high and low current levels. The high-speed switching capability also offers high-power density and low gate charge, making it both cost-effective and suitable for numerous power applications. Furthermore, its advanced packaging technology and thermal characteristics make it an ideal solution for today’s high-performance power system design.

This MOSFET features extremely low on-state resistance, fast switching speed, and high current-handling capacity. In addition, it has a breakdown voltage of 650 V and a gate charge of only 15 nC. These features enable the device to handle large input voltages and excessive current without any issues.

The working principle of a MOSFET is based on the flow of electrons from source to drain when a positive voltage is applied across the gate-source junction. When the gate-source voltage is positive, a channel is formed between the source and the drain allowing a flow of electrons from source to drain through the channel. This results in a regulating effect on the current from source to drain. The MOSFET has an extremely low on-state resistance, which contributes to its ability to maximize the current output and maintains its stability.

The C3M0065090J-TR is highly suitable for use in medium and high-voltage switching applications. In addition, it also offers exceptional performance in power management applications where consistently high current and efficiency must be maintained. It is also widely used in motor drive and white goods, medical device control, consumer electronics, automotive control, and industrial power systems.

The C3M0065090J-TR is a high-performance, cost-effective and reliable MOSFET. Thanks to its advanced packaging and thermal management technology, the device offers excellent power and switching performance, as well as improved thermal stability. Its low on-state resistance and quick switching speeds make it a perfect choice for switching and power management applications across a wide range of industries.

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