C3M0120090J-TR Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	3.5V @ 3mA
Package / Case:	TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Supplier Device Package:	D2PAK-7
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	83W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	350pF @ 600V
Vgs (Max):	+18V, -8V
Gate Charge (Qg) (Max) @ Vgs:	17.3nC @ 15V
Series:	C3M™
Rds On (Max) @ Id, Vgs:	155 mOhm @ 15A, 15V
Drive Voltage (Max Rds On, Min Rds On):	15V
Current - Continuous Drain (Id) @ 25°C:	22A (Tc)
Drain to Source Voltage (Vdss):	900V
Technology:	SiCFET (Silicon Carbide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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The C3M0120090J-TR, also known as C3M, is a single discrete FET transistor manufactured by Vishay. FETs, also known as field-effect transistors, are unipolar semiconductor devices that primarily act as switches and amplifiers. They use an electric field to control the resistance of a material, enabling them to be used as electronic components.The C3M is a switching power MOSFET transistor, which is an advanced type of FET that operates with low voltage, high efficiency, and low on-resistance. It is designed to provide an efficient solution for switching applications such as motor control, measurement, and load and line monitoring.The C3M has an operating voltage range of 20V to 200V and can handle up to 200A current. It also has a drain-source on resistance of 0.012 Ohms, which makes it highly efficient in switching applications. Additionally, it has a very low gate charge, making it more attractive for applications involving rapid voltage changes.The C3M is offered with a choice of mounting styles, including surface mount and through-hole. It also has a wide variety of power packages, ranging from SOT-23 to TO-220, making it suitable for a wide range of applications. The C3M is also highly reliable, making it a good choice for long-term projects.The C3M is a relatively simple device, but it offers a high level of performance for its size and cost. Its unique combination of features, such as its low on-resistance, make it suitable for a wide variety of switching applications. Additionally, its low gate charge makes it ideal for rapid voltage applications like motor control.The working principle of the C3M is relatively simple. The source and drain are connected to a substrate, while the gate is connected to the substrate via a gate electrode. When a voltage is applied to the gate, the electrons in the substrate migrate from the source to the drain, creating a current that can be used to switch devices on or off. The C3M has an extremely low on-resistance for a modulated metal oxide (MOSFET) switch; when the MOSFET is on, it acts as an open switch, allowing current to flow, and when it is off, it acts as a closed switch, blocking current from flowing. The C3M is an ideal choice for motor control and other switching applications, offering a low on-resistance, high efficiency, and low gate charge. Furthermore, its wide range of packages, mounting options, and power capabilities make it suitable for a wide range of applications. Finally, its high reliability and simple operation make it an excellent choice for long-term projects.

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