Allicdata Part #: | C3M0280090D-ND |
Manufacturer Part#: |
C3M0280090D |
Price: | $ 2.52 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Cree/Wolfspeed |
Short Description: | MOSFET N-CH 900V 11.5A |
More Detail: | N-Channel 900V 11.5A (Tc) 54W (Tc) Through Hole TO... |
DataSheet: | C3M0280090D Datasheet/PDF |
Quantity: | 996 |
1 +: | $ 2.29320 |
Vgs(th) (Max) @ Id: | 3.5V @ 1.2mA |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 54W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 150pF @ 600V |
Vgs (Max): | +18V, -8V |
Gate Charge (Qg) (Max) @ Vgs: | 9.5nC @ 15V |
Series: | C3M™ |
Rds On (Max) @ Id, Vgs: | 360 mOhm @ 7.5A, 15V |
Drive Voltage (Max Rds On, Min Rds On): | 15V |
Current - Continuous Drain (Id) @ 25°C: | 11.5A (Tc) |
Drain to Source Voltage (Vdss): | 900V |
Technology: | SiCFET (Silicon Carbide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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C3M0280090D transistors are a type of FETs, or field-effect transistors, a type of semiconductor device that is used in a range of applications. In this article, we will explore the C3M0280090D’s application fields and the working principle of its single type.
Application Field
C3M0280090D is a type of insulated-gate bipolar transistors (IGBTs) which offers advantages such as wide range of current and voltage ratings as well as high switching speed. This makes it ideally suited for use in a wide range of modern power electronics applications, such as motor control, solar power inverters, DC to DC converters, and Class D audio amplifiers.
In motor control applications, C3M0280090D can be used to switch loads with a wide range of operating voltages, allowing for variable speed control of the load. The device is able to operate in both positive and negative currents and at high current levels, making it suitable for use in the DC to DC converter circuits. Additionally, it can also be used in situations where a fast switching speed is needed, such as in class D audio amplifiers.
Working Principle
The C3M0280090D is a single type FET, which means that it uses a single gate to control current flow. A gate is a p-type layer of semiconductor material that is placed between the source and drain areas on the FET. The gate is then connected to a voltage source, which will determine the resistance of the channel between the source and drain. The resistance of the channel, known as the threshold voltage, is what determines the current flow through the channel.
When a positive voltage is applied to the gate, the C3M0280090D will start to conduct current, this is known as the turn-on mode. As the voltage increases, the drain current will increase until it reaches its peak. This voltage-capable current is known as the saturation current. Once the current reaches the peak, further increases in the gate voltage will not cause an increase in the drain current.
When a negative voltage is applied to the gate, the FET will start to cut off, or enter the turn-off mode. As the voltage decreases, the drain current will decrease and will eventually reach a zero level. This voltage at which the drain current reaches zero is known as the cutoff voltage. Thus, it is up to the user to apply the appropriate voltage level to the gate in order to properly control the device.
As can be seen, the C3M0280090D can prove to be an invaluable device for a wide range of applications, from motor control to DC to DC converters. By understanding its principle of operation and its voltage capable ranges, an engineer can easily and effectively incorporate this device into the various power electronics circuits and applications.
The specific data is subject to PDF, and the above content is for reference
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