C3M0280090D Allicdata Electronics
Allicdata Part #:

C3M0280090D-ND

Manufacturer Part#:

C3M0280090D

Price: $ 2.52
Product Category:

Discrete Semiconductor Products

Manufacturer: Cree/Wolfspeed
Short Description: MOSFET N-CH 900V 11.5A
More Detail: N-Channel 900V 11.5A (Tc) 54W (Tc) Through Hole TO...
DataSheet: C3M0280090D datasheetC3M0280090D Datasheet/PDF
Quantity: 996
1 +: $ 2.29320
Stock 996Can Ship Immediately
$ 2.52
Specifications
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 54W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 600V
Vgs (Max): +18V, -8V
Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 15V
Series: C3M™
Rds On (Max) @ Id, Vgs: 360 mOhm @ 7.5A, 15V
Drive Voltage (Max Rds On, Min Rds On): 15V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
Drain to Source Voltage (Vdss): 900V
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

C3M0280090D transistors are a type of FETs, or field-effect transistors, a type of semiconductor device that is used in a range of applications. In this article, we will explore the C3M0280090D’s application fields and the working principle of its single type.

Application Field

C3M0280090D is a type of insulated-gate bipolar transistors (IGBTs) which offers advantages such as wide range of current and voltage ratings as well as high switching speed. This makes it ideally suited for use in a wide range of modern power electronics applications, such as motor control, solar power inverters, DC to DC converters, and Class D audio amplifiers.

In motor control applications, C3M0280090D can be used to switch loads with a wide range of operating voltages, allowing for variable speed control of the load. The device is able to operate in both positive and negative currents and at high current levels, making it suitable for use in the DC to DC converter circuits. Additionally, it can also be used in situations where a fast switching speed is needed, such as in class D audio amplifiers.

Working Principle

The C3M0280090D is a single type FET, which means that it uses a single gate to control current flow. A gate is a p-type layer of semiconductor material that is placed between the source and drain areas on the FET. The gate is then connected to a voltage source, which will determine the resistance of the channel between the source and drain. The resistance of the channel, known as the threshold voltage, is what determines the current flow through the channel.

When a positive voltage is applied to the gate, the C3M0280090D will start to conduct current, this is known as the turn-on mode. As the voltage increases, the drain current will increase until it reaches its peak. This voltage-capable current is known as the saturation current. Once the current reaches the peak, further increases in the gate voltage will not cause an increase in the drain current.

When a negative voltage is applied to the gate, the FET will start to cut off, or enter the turn-off mode. As the voltage decreases, the drain current will decrease and will eventually reach a zero level. This voltage at which the drain current reaches zero is known as the cutoff voltage. Thus, it is up to the user to apply the appropriate voltage level to the gate in order to properly control the device.

As can be seen, the C3M0280090D can prove to be an invaluable device for a wide range of applications, from motor control to DC to DC converters. By understanding its principle of operation and its voltage capable ranges, an engineer can easily and effectively incorporate this device into the various power electronics circuits and applications.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "C3M0" Included word is 18
Part Number Manufacturer Price Quantity Description
C3M0030090K Cree/Wolfspe... 21.34 $ 1000 ZFET 900V, 30 MOHM, G3 SI...
C3M0120090D Cree/Wolfspe... 4.68 $ 1000 900V, 120 MOHM, G3 SIC MO...
C3M0065090D Cree/Wolfspe... -- 1000 MOSFET N-CH 900V 36A TO24...
C3M0065090J Cree/Wolfspe... 9.4 $ 1000 MOSFET N-CH 900V 35A D2PA...
C3M0065100J Cree/Wolfspe... 8.86 $ 1000 MOSFET N-CH 1000V 35A D2P...
C3M0075120K Cree/Wolfspe... 9.22 $ 1000 MOSFET N-CH 1200V 30.8A T...
C3M0120090J-TR Cree/Wolfspe... 4.81 $ 1000 MOSFET N-CH 900V 22AN-Cha...
C3M0280090D Cree/Wolfspe... 2.52 $ 996 MOSFET N-CH 900V 11.5AN-C...
C3M0280090J-TR Cree/Wolfspe... 2.66 $ 1000 MOSFET N-CH 900V 11AN-Cha...
C3M0280090J Cree/Wolfspe... 2.66 $ 1000 MOSFET N-CH 900V 11AN-Cha...
C3M0120100J Cree/Wolfspe... 6.36 $ 1000 MOSFET N-CH 1000V 22A D2P...
C3M0120100K Cree/Wolfspe... 6.36 $ 242 MOSFET N-CH 1000V 22A TO2...
C3M0065100K Cree/Wolfspe... 8.86 $ 1000 1000V, 65 MOHM, G3 SIC MO...
C3M0075120J-TR Cree/Wolfspe... 9.22 $ 1000 1200V, 75 MOHM, G3 SIC MO...
C3M0120090J Cree/Wolfspe... 6.02 $ 955 MOSFET N-CH 900V 22AN-Cha...
C3M0075120J Cree/Wolfspe... 10.94 $ 1000 MOSFET N-CH 1200V 30A D2P...
C3M0065090J-TR Cree/Wolfspe... 7.6 $ 1000 MOSFET N-CH 900V 35A D2PA...
C3M0065100J-TR Cree/Wolfspe... 8.94 $ 1000 1000V, 65 MOHM, G3 SIC MO...
Latest Products
IRFL31N20D

MOSFET N-CH 200V 31A D2PAKN-Channel 200V...

IRFL31N20D Allicdata Electronics
IXTT440N055T2

MOSFET N-CH 55V 440A TO-268N-Channel 55V...

IXTT440N055T2 Allicdata Electronics
IXTH14N80

MOSFET N-CH 800V 14A TO-247N-Channel 800...

IXTH14N80 Allicdata Electronics
IXFT23N60Q

MOSFET N-CH 600V 23A TO-268(D3)N-Channel...

IXFT23N60Q Allicdata Electronics
IXTT72N20

MOSFET N-CH 200V 72A TO-268N-Channel 200...

IXTT72N20 Allicdata Electronics
IXFT9N80Q

MOSFET N-CH 800V 9A TO-268N-Channel 800V...

IXFT9N80Q Allicdata Electronics