Allicdata Part #: | C3M0065100J-ND |
Manufacturer Part#: |
C3M0065100J |
Price: | $ 8.86 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Cree/Wolfspeed |
Short Description: | MOSFET N-CH 1000V 35A D2PAK-7 |
More Detail: | N-Channel 1000V 35A (Tc) 113.5W (Tc) Surface Mount... |
DataSheet: | C3M0065100J Datasheet/PDF |
Quantity: | 1000 |
1 +: | $ 8.04510 |
Vgs(th) (Max) @ Id: | 3.5V @ 5mA |
Package / Case: | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
Supplier Device Package: | D2PAK-7 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 113.5W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 660pF @ 600V |
Vgs (Max): | +15V, -4V |
Gate Charge (Qg) (Max) @ Vgs: | 35nC @ 15V |
Series: | C3M™ |
Rds On (Max) @ Id, Vgs: | 78 mOhm @ 20A, 15V |
Drive Voltage (Max Rds On, Min Rds On): | 15V |
Current - Continuous Drain (Id) @ 25°C: | 35A (Tc) |
Drain to Source Voltage (Vdss): | 1000V |
Technology: | SiCFET (Silicon Carbide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The C3M0065100J is a MOSFET transistor (Metal-Oxide-Semiconductor Field-Effect Transistor). It is a type of field-effect transistor (FET) that utilizes an insulated gate to control the conductivity of the channel. The insulated-gate field-effect transistor (IGFET), or MOSFET is the most used transistor in digital and analog circuits. This type of transistor is quite similar to the JFET, in that it operates by using an electric field to control the current flow through the transistor. It has a very high input impedance, making it extremely reliable inhigh-speed applications.
The C3M0065100J has an operating temperature range of -55°C to 175°C and is VDS rated at 30V. This device is able to output over 65V drain-source voltage and is capable of handling 8A of drain current. It has an ID (on) at a VGS voltage of 4.5V of 4.5A and has an RDS (on) rating of 60mΩ max. This device is well suited for analog circuits, motor control, and various other power supply applications. The C3M0065100J provides excellent low-gate charge and can be used in low-to-mid power applications.
The C3M0065100J works as follows: a voltage applied between the gate and the source, a gate-source voltage, causes a conductive channel to be formed between the drain and not the source. This causes the current to flow from the drain to the source. When the voltage on the gate is increased to a certain point, the drain-source resistance (RDS) decreases and the device enters saturation. In this region the current is controlled primarily by the drain-source voltage (VDS) and the drain current (ID) is limited by the gate-source voltage.
The C3M0065100J is a very popular device in the semiconductor industry due to its impressive performance, low power consumption, and flexibility. Its wide operating temperature range and high reliability make it an ideal choice for use in many different types of applications. This device has proven to be very useful in motor control, power supply, and consumer product applications, as well as many other areas.
Due to its advantages, the C3M0065100J has become the preferred device for a wide range of applications. Motor control and power supplies are just a few of the areas where this device is being used. Other applications that benefit from the C3M0065100J include digital signal processing, notebook computers, digital gaming systems, and automobiles.
In summary, the C3M0065100J is one of the most popular MOSFET transistors available. It has superior performance, low power consumption, and is suitable for most digital and analog applications. Its versatility, affordability, and reliability make it an ideal choice for a wide variety of applications.
The specific data is subject to PDF, and the above content is for reference
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