Allicdata Part #: | C3M0120090J-ND |
Manufacturer Part#: |
C3M0120090J |
Price: | $ 6.02 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Cree/Wolfspeed |
Short Description: | MOSFET N-CH 900V 22A |
More Detail: | N-Channel 900V 22A (Tc) 83W (Tc) Surface Mount D2P... |
DataSheet: | C3M0120090J Datasheet/PDF |
Quantity: | 955 |
1 +: | $ 5.46840 |
Vgs(th) (Max) @ Id: | 3.5V @ 3mA |
Package / Case: | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
Supplier Device Package: | D2PAK-7 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 83W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 350pF @ 600V |
Vgs (Max): | +18V, -8V |
Gate Charge (Qg) (Max) @ Vgs: | 17.3nC @ 15V |
Series: | C3M™ |
Rds On (Max) @ Id, Vgs: | 155 mOhm @ 15A, 15V |
Drive Voltage (Max Rds On, Min Rds On): | 15V |
Current - Continuous Drain (Id) @ 25°C: | 22A (Tc) |
Drain to Source Voltage (Vdss): | 900V |
Technology: | SiCFET (Silicon Carbide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The versatile C3M0120090J MOSFET is a powerful and popular transistor device, commonly used in a variety of switching and amplifying applications. The C3M0120090J offers many advantages, such as very low static and dynamic power consumption and low resistance when in the ‘on’ state, making it a great choice for applications where power-efficient control is important. This article discusses the application field and working principle of the C3M0120090J in detail.
The C3M0120090J is a surface-mount MOSFET of the enhancement type. It is based upon n-channel junction technology, and functions by controlling the flow of electrons through its ‘on’ and ‘off’ states. The C3M0120090J is designed for use in applications where space and power constraints dictate a surface-mount or single-package solution for control.
The C3M0120090J is well suited for a range of applications, from industrial to automotive and from mobile to domestic use. It provides efficient and reliable switching of power supplies, and its isolating capabilities make it particularly suitable for use with power supplies that must be connected to different circuits. Additionally, the C3M0120090J is commonly used in amplifying applications such as audio amplifiers and power supply line regulation.
In its ‘on’ state, the C3M0120090J is operated as an enhancement MOSFET, using the application of a positive voltage to the Gate of the device. This positive voltage creates an electric field between the Gate and Source of the device, which results in a channel of electrons connecting the Source and Drain. This electron drift provides the device with its low resistance, and its low static power consumption results from its very low current demands.
In its ‘off’ state, the C3M0120090J is operated as a depletion MOSFET, which means that a negative voltage must be applied to the Gate of the device. This creates an electric field opposite to that created when in its ‘on’ state, which opens the channel between Source and Drain and prevents the flow of electrons. The C3M0120090J also offers impressive dynamic power consumption in its ‘off’ state, a marked benefit for applications where power savings are important.
The C3M0120090J is generally a robust, reliable device. Its native resistance is such that when operated within the rated environments it will continue to operate for many years with minimal maintenance. Its ability to be over-driven and operate in extreme temperatures also makes it suitable for use in environments where high or varying power demands are present.
The C3M0120090J has many impressive characteristics, which make it ideal for a variety of applications. Its low static and dynamic power consumption, small size and high reliability make it a great choice for the most demanding applications. It is easy to install, and its ability to switch quickly enhances its overall performance. Whether in industrial, automotive, mobile or domestic applications, the C3M0120090J is sure to provide efficient and reliable operation under the most taxing conditions.
The specific data is subject to PDF, and the above content is for reference
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