C3M0075120J-TR

Vgs(th) (Max) @ Id:	4V @ 5mA
Package / Case:	TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Supplier Device Package:	TO-263-7
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	113.6W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1350pF @ 1000V
Vgs (Max):	+15V, -4V
Gate Charge (Qg) (Max) @ Vgs:	51nC @ 15V
Series:	C3M™
Rds On (Max) @ Id, Vgs:	90 mOhm @ 20A, 15V
Drive Voltage (Max Rds On, Min Rds On):	15V
Current - Continuous Drain (Id) @ 25°C:	30A (Tc)
Drain to Source Voltage (Vdss):	1200V
Technology:	SiC (Silicon Carbide Junction Transistor)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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C3M0075120J-TR Application Field and Working Principle

The C3M0075120J-TR is a transistor device that falls under the category of transistors- FETs, MOSFETs-Single. It is designed using advanced process technology and is well-suited for use in high-frequency power conversion applications. The C3M0075120J-TR is designed to handle high-current and high-voltage applications, and has a high-frequency switching capability.

Features of C3M0075120J-TR

The C3M0075120J-TR has several important features that make it ideal for a variety of applications. First, it has a continuous drain current rating of 75A, making it well-suited for applications that require high currents. Additionally, the C3M0075120J-TR has a drain-source breakdown voltage of 1200V, making it suitable for high voltage applications. It also has an operating temperature range of -55°C to +175°C, making it suitable for use in extreme environments. Lastly, the C3M0075120J-TR has fast switching speed, a low on-state resistance, and low drain-source capacitance.

Applications

The C3M0075120J-TR is a great device for a variety of applications, including power conversion applications, DC-DC converters, switching power supplies, and more. Additionally, it is also suitable for use in a variety of devices, including mobile phone chargers, laptop chargers, medical equipment, battery packs, and more.

Working Principle

The C3M0075120J-TR is a field-effect transistor (FET). FETs are three-terminal devices that rely on the application of an electrical field to create a current between the source and drain terminals. The C3M0075120J-TR works based on this principle. When a positive voltage is applied to the gate terminal, an electrical field is created between the source and drain terminals. This electrical field creates a conductive path between the source and drain, allowing current to flow. As the voltage on the gate terminal is increased, the current between the source and drain increases.When the gate voltage is decreased, the electrical field reduces and the current between the source and drain decreases. This phenomenon, known as “pinch-off”, is how the C3M0075120J-TR creates the switching effect. By controlling the voltage on the gate terminal, the C3M0075120J-TR can be used to control the current between the source and drain terminals.

Conclusion

The C3M0075120J-TR is an ideal device for a wide variety of power conversion applications, due to its impressive drain current rating, breakdown voltage, switching speed, and low on-state resistance and drain-source capacitance. Additionally, its ability to easily create switching effects makes it a great device for a variety of applications. By understanding the device’s working principle and its features, engineers can make use of this device in their designs.

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