Allicdata Part #: | C3M0065090J-ND |
Manufacturer Part#: |
C3M0065090J |
Price: | $ 9.40 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Cree/Wolfspeed |
Short Description: | MOSFET N-CH 900V 35A D2PAK-7 |
More Detail: | N-Channel 900V 35A (Tc) 113W (Tc) Surface Mount D2... |
DataSheet: | C3M0065090J Datasheet/PDF |
Quantity: | 1000 |
1 +: | $ 8.54280 |
Vgs(th) (Max) @ Id: | 2.1V @ 5mA |
Package / Case: | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
Supplier Device Package: | D2PAK-7 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 113W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 660pF @ 600V |
Vgs (Max): | +19V, -8V |
Gate Charge (Qg) (Max) @ Vgs: | 30nC @ 15V |
Series: | C3M™ |
Rds On (Max) @ Id, Vgs: | 78 mOhm @ 20A, 15V |
Drive Voltage (Max Rds On, Min Rds On): | 15V |
Current - Continuous Drain (Id) @ 25°C: | 35A (Tc) |
Drain to Source Voltage (Vdss): | 900V |
Technology: | SiCFET (Silicon Carbide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The C3M0065090J is an N-channel Enhancement-mode MOSFET developed by Vishay. It is a high voltage power MOSFET used in applications beyond 600 volts. The C3M0065090J is ideal for working in automotive, consumer care and industrial power applications. This N-channel MOSFET has an Avalanche Rugged Technology (ART) which enables effective operation in high temperature and high voltage applications. High frequency switching applications, with speeds up to 10 kHz, are also suitable with this device.
The C3M0065090J is supplied in a D2-PAK package that offers increased surface area for improved thermal performance and maximum energy efficiency. The C3M0065090J provides superior switching performance, high blocking capability and very low residual resistance. It also offers an improved simultaneous reverse avalanche capability, which helps to protect the device from high temperatures and power dissipation.
The main application field of the C3M0065090J is in automotive, consumer care and industrial power. This MOSFET also can be used as a load switch for audio/video/telecommunication applications, providing superior signal integrity with low signal losses. The C3M0065090J also boasts low gate charge and gate resistance, low input capacitance and reliable operation at higher frequencies.
The working principle of the C3M0065090J is that the gate voltage controls the flow of current through the device. When the gate voltage is low, the N-channel MOSFET is turned off and no current flows through the device. However, when a sufficient gate voltage is applied, the device turns on and current can flow through the device. The higher the gate voltage, the more current will flow through the MOSFET.
The C3M0065090J’s ART provides superior protection against damaging transient voltages and current spikes that could occur during heavy load switching. The C3M0065090J’s Avalanche Rugged Technology provides superior protection against static and thermal shocks and also effectively helps prevent damage due to surge currents.
This N-channel MOSFET is ideal for applications that require high voltages and reliable operation at high frequencies. The C3M0065090J is also suitable for use in heavy load switching applications, such as audio/video/telecommunications, which require signal integrity and low signal losses.
In conclusion, the C3M0065090J is an ideal MOSFET for use in heavy load switching and high voltage applications. It boasts an Avalanche Rugged Technology which provides superior protection against static, thermal shocks and surge current. The C3M0065090J also boasts a low gate charge and gate resistance as well as a low input capacitance, making it suitable for high frequency switching applications with speeds up to 10 kHz.
The specific data is subject to PDF, and the above content is for reference
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