Allicdata Part #: | CPH3356-TL-H-ND |
Manufacturer Part#: |
CPH3356-TL-H |
Price: | $ 0.11 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 20V 2.5A CPH3 |
More Detail: | P-Channel 20V 2.5A (Ta) 1W (Ta) Surface Mount 3-CP... |
DataSheet: | CPH3356-TL-H Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.09231 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Not For New Designs |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 2.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs: | 137 mOhm @ 1A, 4.5V |
Vgs(th) (Max) @ Id: | -- |
Gate Charge (Qg) (Max) @ Vgs: | 3.3nC @ 4.5V |
Vgs (Max): | ±10V |
Input Capacitance (Ciss) (Max) @ Vds: | 250pF @ 10V |
FET Feature: | -- |
Power Dissipation (Max): | 1W (Ta) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 3-CPH |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
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CPH3356-TL-H is a field effect transistor (FET) that belongs to the category of single metal oxide semiconductor (MOS) FETs. The CPH3356-TL-H is a high-voltage power device that is often used for applications such as a high-performance audio amplifiers, high voltage switching and voltage regulators. The device is designed to be suitable for applications such as home audio, computer audio, car audio, professional audio, and other high-voltage applications.
The CPH3356-TL-H is a laterally diffused metal oxide semiconductor (LDMOS) FET. The device has a power rating of 120W with an drain-source voltage of 500V. The package is a traditional TO-220, which provides a good electrical connection and an efficient thermal management. The device has low on-resistance and ultra-low gate charge which make it ideally suited for high-efficiency applications. The CPH3356-TL-H has a maximum drain current of 8.5A and a maximum dielectric strength of 1500V.
The working principle of the CPH3356-TL-H is based on the principle of field effect. The transistor works by having an electric field created by the gate to control the flow of current between the source and the drain. This electric field is created when a voltage is applied to the gate which creates a depletion layer in the silicon substrate and this depletion layer can be used to control the current flow between the source and the drain by controlling the width of the depletion layer.
The CPH3356-TL-H has a variety of features which make it useful for high-performance applications. For example, it has a high input impedance which helps increase the gain of the device, it also has low gate capacitance which helps reduce switching losses, and it has low on-resistance which reduces power consumption and improves efficiency. The device also exhibits excellent thermal stability and high frequency performance which makes it suitable for high-speed applications.
The CPH3356-TL-H is a very efficient and reliable device which is suitable for many different applications. It is an ideal choice for audio amplification, high voltage switching and voltage regulators. Its features such as high input impedance, low gate charge, low on-resistance and excellent thermal stability make it an excellent choice for high-performance applications. Its wide availability and low cost make it easily accessible and cost effective.
The specific data is subject to PDF, and the above content is for reference
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