CPH6223-TL-E

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	NPN
Current - Collector (Ic) (Max):	3A
Voltage - Collector Emitter Breakdown (Max):	50V
Vce Saturation (Max) @ Ib, Ic:	240mV @ 100mA, 2A
Current - Collector Cutoff (Max):	1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	200 @ 100mA, 2V
Power - Max:	1.3W
Frequency - Transition:	380MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SOT-23-6 Thin, TSOT-23-6
Supplier Device Package:	6-CPH

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction

CPH6223-TL-E is a single bipolar junction transistor (BJT) that is used in a wide range of applications. The device is an NPN transistor made of silicon and offers a variety of features that make it ideal for use in many types of applications. CPH6223-TL-E has a maximum voltage of 70V, an operating temperature range of -55°C to +150°C, and a maximum collector current of 30A. It has a package size of 2.00 x 2.30 mm and is suitable for use in both surface-mount and through-hole applications.

Application Fields and Working Principle

CPH6223-TL-E can be used in a variety of applications due to its wide range of features. The device is typically used in amplifier circuits, power supplies, switching circuits, and various other kinds of signal processing applications. The device is also well-suited for use as an amplifier for audio and video signals, as well as for radio frequency applications. At the heart of the CPH6223-TL-E device is a single bipolar system that consists of three main components; the emitter, the base, and the collector. An electrical current is applied between the emitter and the base, which causes electrons to be drawn away from the emitter and toward the base. This causes the base to become negative and turn the transistor "off". Conversely, when the base is connected to the collector, current is applied to the base and causes electrons to be drawn away from the collector, thus turning the transistor "on". When the transistor is "on", the current flowing through the collector-emitter junction is much larger than the current flowing through the base-emitter junction; this is known as the current gain of the transistor, and is represented by the common abbreviation hFE. The current gain of CPH6223-TL-E is typically between 400 and 800.

Advantages

The CPH6223-TL-E offers a number of advantages over other transistors. The device has a very low turn on voltage and is able to switch quickly between "on" and "off" states. The device also has a low saturation voltage, which means that the voltage drop across the transistor is minimized when it is in the "on" state. Additionally, the device is able to handle high amounts of current without a significant amount of heating, and can operate at high frequencies without significant signal distortion. The device also has relatively low power consumption, while still offering high output current and a wide range of operating temperatures. This makes it well-suited for a variety of applications, including those that require high power dissipation and/or high frequency operation.

Conclusion

CPH6223-TL-E is a single bipolar junction transistor that is suitable for use in a wide range of applications. The device is ideal for use in amplifier circuits, power supplies, switch circuits, and various other signal processing applications, as well as in high-power, high-frequency operations. CPH6223-TL-E offers a number of advantages over other transistors, including low power consumption, high output current, a wide range of operating temperatures, and a very low turn on voltage.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description