Allicdata Part #: | 296-48903-2-ND |
Manufacturer Part#: |
CSD25480F3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Texas Instruments |
Short Description: | MOSFET P-CH 20V 1.7A PICOSTAR |
More Detail: | P-Channel 20V 1.7A (Ta) 500mW (Ta) Surface Mount 3... |
DataSheet: | CSD25480F3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1.2V @ 250µA |
Package / Case: | 3-XFDFN |
Supplier Device Package: | 3-PICOSTAR |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 500mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 155pF @ 10V |
Vgs (Max): | -12V |
Gate Charge (Qg) (Max) @ Vgs: | 0.91nC @ 4.5V |
Series: | FemtoFET™ |
Rds On (Max) @ Id, Vgs: | 132 mOhm @ 400mA, 8V |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 8V |
Current - Continuous Drain (Id) @ 25°C: | 1.7A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The CSD25480F3 is a monolithic self-protected (SP) H-bridge power MOSFET having an integrated charge pump, gate drive, and protection circuitry. This device is designed specifically for applications needing high efficiency and high current isolation while providing continuous current protection and fast acting fault protection. It is ideal for use in applications such as motor control, switching power supplies, automotive, solar panels and injection motors.
The CSD25480F3 is a single, N-channel enhancement mode MOSFET. It is based on an advanced Flip-Chip technology for its vertical N-channel MOSFETs, and its gate drive is engineered for higher performance and increased reliability. This device also has an integrated charge pump and gate drive that provide continuous current protection as well as fault protection. It has an integrated MOSFET with a wide voltage range of 5V to 18V, and a maximum drain current of 25A. The device has low conduction losses and switching losses, while also providing high-side current sense and fast acting fault protection.
The working principle of the CSD25480F3 is that it uses a charge pump to regulate gate voltage. The gate voltage applied to the MOSFET is automatically adjusted based on the drain current. With this feature, the device provides a self-protecting feature. The charge pump circuitry senses the drain current and continually adjusts the gate voltage such that the drain current is maintained at the desired operating level. The other protection feature provided by this device is the fast acting fault protection. This is done by sensing the gate voltage in order to detect any fault condition in the system, and then quickly turning off the device. This feature helps to prevent further damage to the system.
The CSD25480F3 is ideal for use in applications such as motor control, switching power supplies, and automotive lighting. It is also suitable for most applications requiring high current isolation such as solar panels and injection motors. Additionally, the device is also very suitable for use in applications that require high efficiency and low power loss such as power supplies and lighting.
In conclusion, the CSD25480F3 is a monolithic self-protected H-bridge power MOSFET, with an integrated charge pump, protection and gate drive. It has a wide voltage range of 5V to 18V and a maximum drain current of 25A. It is ideal for applications requiring high efficiency and high current isolation such as motor control, switching power supplies, automotive lighting, solar panels and injection motors. It has a fast acting fault protection feature which helps to prevent further damage to the system. Additionally, it has low conduction losses and switching losses that make it very suitable for use in applications that require high efficiency and low power loss.
The specific data is subject to PDF, and the above content is for reference
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