CSD25501F3 Allicdata Electronics
Allicdata Part #:

CSD25501F3-ND

Manufacturer Part#:

CSD25501F3

Price: $ 0.08
Product Category:

Discrete Semiconductor Products

Manufacturer: Texas Instruments
Short Description: 20V P CH MOSFET
More Detail: P-Channel 20V 3.6A (Ta) 500mW (Ta) Surface Mount 3...
DataSheet: CSD25501F3 datasheetCSD25501F3 Datasheet/PDF
Quantity: 1000
1 +: $ 0.08000
10 +: $ 0.07760
100 +: $ 0.07600
1000 +: $ 0.07440
10000 +: $ 0.07200
Stock 1000Can Ship Immediately
$ 0.08
Specifications
Vgs(th) (Max) @ Id: 1.05V @ 250µA
Package / Case: 3-XFLGA
Supplier Device Package: 3-LGA (0.73x0.64)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 500mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 385pF @ 10V
Vgs (Max): -20V
Gate Charge (Qg) (Max) @ Vgs: 1.33nC @ 4.5V
Series: FemtoFET™
Rds On (Max) @ Id, Vgs: 76 mOhm @ 400mA, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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A CSD25501F3 is a type of field-effect transistor (FET). The FET is a three-terminal device that controls an electrical signal using a electric field, which involves an gate, source, and drain terminals. The CSD25501F3 is a single FET, meaning that it contains one FET. This type of FET has a voltage rating of 40V, a current rating of 6A, and a package size of 4x4 mm.

The CSD25501F3 is used in many applications and is suited for a wide range of applications. Commonly, it is used in power converters and motor control circuits. It is also used in battery management systems and lighting applications. Due to its high breakdown voltage rating and its low junction-capacitance, it allows for fast switching applications.

The way a FET works is by the use of an electric field. When you apply Voltage to the Gate terminal, an electric field is created between the Gate and Source terminals. This field is what controls the current flow between these terminals. When no voltage is applied to the gate Terminal, the electric field is zero and no current flows. If a voltage is applied to the gate terminal, the electric field is maximized, allowing for current to flow between the source and drain.

The CSD25501F3 has a low drain-source on-resistance of 250 mΩ when a gate-source voltage of 3.3V is applied. This allows for low power dissipation and lower power losses in higher-frequency applications. In voltage-controlled applications, the FET has a linear transfer characteristics and fast switching times, allowing for precise control and fast switching.

The drain-source diode in the CSD25501F3 also allows for fast body diode recovery. This allows for fast reversing of current direction, which makes it ideal for motor control applications. It also has a temperature rating of 175C, which makes it suitable for high-temperature applications.

There is also a mounting system available for the CSD25501F3 that allows for ease of installation. This mounting is compatible with the standard SOT-223 package, which makes installation easier and less time consuming, which is beneficial for large-scale production.

In conclusion, the CSD25501F3 is a single FET with a wide range of applications. Its low drain-source on-resistance, fast switching time and diode recovery make it ideal for power converters, motor control circuits, battery management systems, lightings, and other voltage-controlled applications. The mounting system also makes installation and maintenance easier, which is beneficial for large-scale production.

The specific data is subject to PDF, and the above content is for reference

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