Allicdata Part #: | 296-36578-2-ND |
Manufacturer Part#: |
CSD25211W1015 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Texas Instruments |
Short Description: | MOSFET P-CH 20V 3.2A 6DSBGA |
More Detail: | P-Channel 20V 3.2A (Ta) 1W (Ta) Surface Mount 6-DS... |
DataSheet: | CSD25211W1015 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1.1V @ 250µA |
Package / Case: | 6-UFBGA, DSBGA |
Supplier Device Package: | 6-DSBGA (1x1.5) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 570pF @ 10V |
Vgs (Max): | -6V |
Gate Charge (Qg) (Max) @ Vgs: | 4.1nC @ 4.5V |
Series: | NexFET™ |
Rds On (Max) @ Id, Vgs: | 33 mOhm @ 1.5A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 3.2A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The CSD25211W1015 is a high-voltage step-down controller from TI’s family of Gate Drivers and MOSFETs. It is a single 100V N-Channel MOSFET that is small in size, has a low gate charge, and provides a floating power factor correction (PFC) solution. The device is designed to operate within a wide range of DC/DC power applications and is a great fit for many different design configurations.
The CSD25211W1015 device uses a combination of high voltage gates, current-sensing circuitry, and self-biasing output stages to make it a high performance device. It is designed to operate over a wide input voltage (3.3V to 100V) while providing high efficiency, fast transient response, and accurate power management. It features a wide operating temperature range (25°C to +105°C) so it can work in multiple applications ranging from industrial to automotive.
In its application fields, the CSD25211W1015 is used in DC/DC converter applications with wide input voltage ranges. It is ideal for high voltage power supply systems with tight loop constraints. It is also used in automotive applications for supply voltage up to 100V. Moreover, the device is used for LED lighting applications, AC/DC offline applications, and white goods applications.
The working principle of the CSD25211W1015 device is based on the MOSFET technology. The MOSFET works as a voltage-controlled switch. When the gate voltage is low, the device is off, and when the gate voltage is high, the device is on. In order to maximize efficiency, the device features a standard low-drop MOSFET configuration, which is a circuit to reduce power loss and guarantee stable operation in a wide range of input voltage. As far as the current sensing circuitry and the self-biasing output stages of the device, they work together to ensure accurate power and current management within the device.
To sum up, the CSD25211W1015 is a 100V N-Channel MOSFET from TI that is designed to operate within a wide variety of DC/DC power applications. It comes with wide input voltage and operating temperature ranges, current-sensing circuitry, and self-biasing output stages that make this device a high performance one. It is used for a number of applications such as DC/DC converters, automotive applications, LED Lighting, AC/DC offline applications, and white goods applications. The working principle of the device is based on the MOSFET technology, which works as a voltage-controlled switch and provides efficient and accurate power and current management.
The specific data is subject to PDF, and the above content is for reference
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