Allicdata Part #: | 296-38915-2-ND |
Manufacturer Part#: |
CSD25310Q2 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Texas Instruments |
Short Description: | MOSFET P-CH 20V 48A 6SON |
More Detail: | P-Channel 20V 20A (Ta) 2.9W (Ta) Surface Mount 6-W... |
DataSheet: | CSD25310Q2 Datasheet/PDF |
Quantity: | 6000 |
Vgs(th) (Max) @ Id: | 1.1V @ 250µA |
Package / Case: | 6-WDFN Exposed Pad |
Supplier Device Package: | 6-WSON (2x2) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.9W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 655pF @ 10V |
Vgs (Max): | ±8V |
Gate Charge (Qg) (Max) @ Vgs: | 4.7nC @ 4.5V |
Series: | NexFET™ |
Rds On (Max) @ Id, Vgs: | 23.9 mOhm @ 5A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 20A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The CSD25310Q2 MOSFET from Texas Instruments is a high performance and demanding device that is designed with robust reliability and superior protection features and is ideally suited for motion control, DC-DC converters and portable device applications. This device has a low Qrr and low drain-source on-resistance (Rds(on)) of 27 mΩ, making it suitable for application areas where low power losses are at a premium.
This device features the latest semiconductor technology with superior immunity and advanced performance features. The CSD25310Q2 can be used for power-level switching and provide low on-state resistance and withstand high peak currents. Its drain-source breakdown voltage (BVdss) is 40 V and the gate-source voltage (Vgs) can be applied up to a maximum of ±20 V.
The CSD25310Q2 is a high-side, native MOSFET, meaning that the gate is connected directly to the source and the drain voltage is above the potential of the source. It is available in a PowerPAK 8-pin package and is ideal for automotive applications and compliant with AEC-Q101 requirements.
The CSD25310Q2 has an Enhanced-Mode Gate Driver technology that allows for robust operation against negative transients. This device has a multiple speed protection (MSP) feature that provides optimized protection from over-voltage, over-current and over-temperature conditions. The MSP also allows for fast switching times and reduces the risk of errors such as latch-up or power dissipation.
The CSD25310Q2 working principle relies on the application of a voltage or current between the gates (Vgs) and the source of the device. When the voltage or current exceeds a certain threshold, the MOSFET enters the "on-state" and conducts a current through the drain and the source. The drain current (Idss) is limited by Rds(on), the drain-source on-resistance. The achievable amount of drain current increases with an increasing Vgs, but when the gate-source voltage exceeds the "on" threshold, the gate is no longer able to control the drain current and the device enters the "off-state".
The CSD25310Q2 application field includes automotive applications such as the powertrain, HVAC, chassis, lighting, body control and power steering, motion control and DC-DC converters. It can also be used in portable and consumer electronic devices such as mobile phones, PDAs and laptop computers.
The CSD25310Q2 from Texas Insruments is an excellent choice for motion control and DC-DC converters applications. This device is designed for large current driving capability and provides superior protection features against negative transients, over-voltage and over-current. Thanks to its low on-state resistance and high drain-source breakdown voltage, it is an ideal choice for automotive and portable applications.
The specific data is subject to PDF, and the above content is for reference
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