Allicdata Part #: | 296-40003-2-ND |
Manufacturer Part#: |
CSD23382F4 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Texas Instruments |
Short Description: | MOSFET P-CH 12V 3.5A 3PICOSTAR |
More Detail: | P-Channel 12V 3.5A (Ta) 500mW (Ta) Surface Mount 3... |
DataSheet: | CSD23382F4 Datasheet/PDF |
Quantity: | 42000 |
Vgs(th) (Max) @ Id: | 1.1V @ 250µA |
Package / Case: | 3-XFDFN |
Supplier Device Package: | 3-PICOSTAR |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 500mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 235pF @ 6V |
Vgs (Max): | ±8V |
Gate Charge (Qg) (Max) @ Vgs: | 1.35nC @ 6V |
Series: | FemtoFET™ |
Rds On (Max) @ Id, Vgs: | 76 mOhm @ 500mA, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 3.5A (Ta) |
Drain to Source Voltage (Vdss): | 12V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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CSD23382F4 application fields are widely used due to their unique characteristics compared to other power transistors or field effect transistors (FETs). This device belongs to a specific classification of FET transistors called N-channel enhancement mode MOSFETs, which are mainly used for power control applications, such as motor control and switching power supplies. Specifically, the CSD23382F4 is designed for high voltage applications, where its superior breakdown voltage offers superior protection against over-voltages.
The device has a fully-depleted N-channel structure, which allows an extremely large voltage and current to be conducted through the semiconductor structure. A gate is attached to the N-channel which serves as a control electrode, allowing the device to be properly switched on and off with a control voltage.
The CSD23382F4 is a single-channel device, which means that it has a single N-channel MOSFET and it must be used to control a single voltage or current supply. This device\'s on resistance is typically less than 10 ohms and its peak output current is capable of reaching up to 60 amperes. Its maximum source-drain voltage limits are 1.2 kV, while its drain-source leakage current is very low.
The CSD23382F4 is mainly used in high voltage power supplies, such as laptop chargers and appliances. In these applications, the high voltage rating of the device offers superior protection against over-voltaging damage and makes it much more reliable for these types of power supplies. The device can also be used to construct high-side and low-side switches, creating a simple and reliable power control circuit.
The device can also be used for pulse width modulation (PWM) motor control applications, as it offers superior control of the motor’s output speed and torque. In these applications, the speed and torque of the motor can be adjusted by changing the width of the pulses sent to the motor’s input. The CSD23382F4 can be used to switch the pulse width signals on and off, and its high voltage rating ensures that large current and voltage can be correctly adjusted.
In addition, the device is also used in over-voltage protection circuits and reflex arc protection circuits. In over-voltage protection circuits, the device monitors the input voltage and shuts off the power supply if the voltage exceeds a certain limit. In reflex arc protection circuits, the device monitors the voltage and current levels during the arcof electrical switching and, if these levels become too high, the device instantly shuts off the power supply.
Overall, the CSD23382F4 is a highly reliable N-channel MOSFET for high voltage applications. Its high voltage capabilities offer superior protection against over-voltages, while its ability to switch large currents and voltages makes it an excellent choice for power control applications, such as motor control and over-voltage protection circuits. It can be used to construct high-side and low-side switches for power control, and its low leakage current ensures its reliability in these applications.
The specific data is subject to PDF, and the above content is for reference
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