CSD25481F4T

Gate Charge (Qg) (Max) @ Vgs:	0.91nC @ 4.5V
Base Part Number:	CSD25481
Package / Case:	3-XFDFN
Supplier Device Package:	3-PICOSTAR
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	500mW (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	189pF @ 10V
Vgs (Max):	-12V
Series:	FemtoFET™
Vgs(th) (Max) @ Id:	1.2V @ 250µA
Rds On (Max) @ Id, Vgs:	88 mOhm @ 500mA, 8V
Drive Voltage (Max Rds On, Min Rds On):	1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C:	2.5A (Ta)
Drain to Source Voltage (Vdss):	20V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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Introduction

The CSD25481F4T is a high-voltage metal oxide semiconductor field-effect transistor (MOSFET) which can be used in various applications. It is a low-on-resistance, depletion-type MOSFET with a maximum on-state drain current of 175A, a drain-source breakdown voltage of 48V, and a gate-source threshold voltage of 3.2V. The device is designed for easy integration into common switch matrix array layouts and can be used in a wide range of switching applications in medical, industrial, automotive, and consumer electronics devices.

Application Field

The CSD25481F4T is a versatile device, and its features and parameters make it suitable for a broad range of applications. It can be used as a high-voltage switch in automotive, medical, industrial, and consumer electronic applications. For example, in automotive applications, the CSD25481F4T can be used as an inverter switch in power inverters and as a relay switch in power distribution networks. The device can also be used in medical applications such as electrocardiograms (ECGs) and ultrasound imaging systems. Additionally, it can be used in industrial and consumer electronics applications as well, such as in motor controllers, home appliances, and control systems.

Working Principle

In order to understand how the CSD25481F4T works, its biasing configuration must be understood. The device is voltage-controlled and requires two separate power supply sources to operate correctly. The first voltage source provides the biasing necessary to operate the device, and the second is the drain voltage, which is applied directly to the drain terminal.When a voltage is applied to the gate, a positive charge is created, resulting in an increase in the source-drain current. As this source-drain current increases, the voltage drop across the drain-source junction increases, eventually reaching the drain voltage. At this point, the source-drain current is at its maximum and the device is considered “on”. If the gate voltage is then lowered to below the threshold voltage, the source-drain current decreases and the device is considered “off”.

Conclusion

The CSD25481F4T is a versatile high-voltage MOSFET that can be used in a wide range of applications. Its biasing configuration and low on-resistance make it an ideal choice for switching applications in automotive, medical, industrial, and consumer electronics devices. Understanding its operating characteristics is important in order to ensure it is used correctly and safely in any given application.

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