Allicdata Part #: | 296-27609-2-ND |
Manufacturer Part#: |
CSD25201W15 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Texas Instruments |
Short Description: | MOSFET P-CH 20V 4A 9DSBGA |
More Detail: | P-Channel 20V 4A (Ta) 1.5W (Ta) Surface Mount 9-DS... |
DataSheet: | CSD25201W15 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1.1V @ 250µA |
Package / Case: | 9-UFBGA, DSBGA |
Supplier Device Package: | 9-DSBGA |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.5W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 510pF @ 10V |
Vgs (Max): | -6V |
Gate Charge (Qg) (Max) @ Vgs: | 5.6nC @ 4.5V |
Series: | NexFET™ |
Rds On (Max) @ Id, Vgs: | 40 mOhm @ 2A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 4A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The CSD25201W15 is a general-purpose N-channel metal–oxide–semiconductor field-effect transistor (MOSFET) valued by TI, specifically designed for high-voltage applications, although it can also be used in non-high voltage applications. As with all MOSFETs, the CSD25201W15 uses a flow of electrons—or electrical current—at its gate to create an electrical field that can control the flow of electrons in the drain-source channel of the device. It also has several other advantages, including fast switching capabilities, high input impedance, and low-power operation.
The CSD25201W15 is notable for its very high voltage rating, making it ideal for employment in projects requiring high-voltage capacity. This transistor can handle up to 25 volts of gate-source voltage and up to 40 volts of drain-source voltage. It is also capable of switching frequencies up to 5MHz and can handle load currents up to 7 amps without the need for external heatsinking. As a result, the transistor is often used in applications such as audio amplifiers, power supplies, and pulse-width- modulation (PWM) converters as well as in industrial and automotive systems.
MOSFETs work on a fundamentally different principle to traditional transistors, so it is helpful to understand how they work. In a MOSFET, electrons are passed through a gate oxide layer, which isolates the gate from the rest of the circuit. A voltage applied to the gate will cause a vertical electric field to be generated, which will allow electrons to pass through the gate oxide layer, creating a channel. This channel can be used to control the current flow between the source and drain of the device.
The CSD25201W15 is a single-pole single-throw (SPST) device, meaning it has a single electrode controlling the current flow. This has the advantage of FETs that require fewer components to switch than other types of transistors, making them cheaper and faster to build. The transistor also features low gate charge (Qg), allowing for high-frequency operation and fast switching times. The device also has low output capacitance (Coss), which enables high efficiency and low level noise with sufficient noise immunity for many different applications.
Overall, the CSD25201W15 is a great option for applications that require high voltage and high frequency operation, such as audio amplifiers, power supplies, and PWM converters. It is capable of very fast switching speeds and can handle large currents without the need for external heatsinking. It is also compact and inexpensive, making it a great choice for projects constrained by size and cost.
The specific data is subject to PDF, and the above content is for reference
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