Allicdata Part #: | 296-39999-2-ND |
Manufacturer Part#: |
CSD22202W15 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Texas Instruments |
Short Description: | MOSFET P-CH 8V 10A 9DSBGA |
More Detail: | P-Channel 8V 10A (Ta) 1.5W (Ta) Surface Mount 9-DS... |
DataSheet: | CSD22202W15 Datasheet/PDF |
Quantity: | 18000 |
Vgs(th) (Max) @ Id: | 1.1V @ 250µA |
Package / Case: | 9-UFBGA, DSBGA |
Supplier Device Package: | 9-DSBGA |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.5W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1390pF @ 4V |
Vgs (Max): | -6V |
Gate Charge (Qg) (Max) @ Vgs: | 8.4nC @ 4.5V |
Series: | NexFET™ |
Rds On (Max) @ Id, Vgs: | 12.2 mOhm @ 2A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 10A (Ta) |
Drain to Source Voltage (Vdss): | 8V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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CSD22202W15 is a depletion mode single N-Channel MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor). Its application field is widely spread across various areas, such as amplifier or switch control, power management and battery protection, diodes and bridge circuits, rectifier circuits, and more. It also has several important properties, including high-side power switch, very big leadless package, low on-resistor, and high-side load current. In this section, the working principle of CSD22202W15 will be discussed and described.
The depletion mode single N-Channel MOSFET is a type of field effect transistor that works on the principle of a semiconductor diode. Its construction consists of a source, gate, and drain terminal that is connected to various other electronic components such as resistors and other components. In operation, the application of a bias voltage across the source and gate causes a depletion region to be formed between them. This is essentially the turning off point of the MOSFET.
The gate controls the amount of drain current that flows through the channel, so when the gate voltage is increased, more current can flow through the channel than when it is decreased. This is the basic idea behind the operation of an N-Channel MOSFET. When the gate voltage is increased, the depletion region is reduced, allowing more drain current to flow. When the gate voltage is decreased, the depletion region is increased, reducing the drain current.
The CSD22202W15 specifically has a design that simplifies the construction of its circuit, allowing for a high-side power switch, low on-resistor, and a very high-side load current. This makes it ideal for use in applications such as amplifier and switch control, power management and battery protection, diodes and bridge circuits, and rectifier circuits. The high-side power switch allows for it to be used to control large voltages, while the low on-resistor provides superior thermal performance. The very high-side load current will particularly benefit applications such as rectifiers and bridge circuits, allowing for a smaller and more efficient design.
In addition to its extensive application field, the CSD22202W15 also features a wide range of physical properties, proven performance, and reliability. This depletion mode single N-Channel MOSFET is equipped with the latest process technology, making it much more reliable and robust than previous similar models. It is also very heat-resistant and able to withstand high switching currents.
In conclusion, the CSD22202W15 is a reliable, robust, and heat-resistant depletion mode single N-Channel MOSFET. It features a high-side power switch, low on-resistor, and a very high-side load current, making it well-suited for applications such as amplifier or switch control, power management and battery protection, diodes and bridge circuits, and rectifier circuits. Its wide range of physical properties, proven performance, and reliability make it an ideal choice for designers in multiple industries.
The specific data is subject to PDF, and the above content is for reference
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