CSD25501F3T

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The CSD25501F3T is a single N-Channel MOSFET (metal-oxide-semiconductor field-effect transistor) that is able to offer high performance, fast switching, and low-noise operation. It is designed to be used in a wide range of applications. Such applications include switching power converters and servers, where a high-efficiency switch with low pre-switch noise is desired. This device is also suitable for use in general-purpose switching applications, power supplies, DC-DC converters, inverters, and motor control systems.

The CSD25501F3T is manufactured in a surface-mount package, making it quickly and easily mounted on a PCB. This helps to reduce the board area required, making a space-efficient solution for many applications. The device is also lead-free and halogen-free, making it compliant with environmental regulations.

The CSD25501F3T is a n-channel MOSFET with a Rds(on) of 0.14 Ω at VGS of 4.5V and has a low gate charge of 30 nC, making it highly efficient in a wide range of applications. The advanced geometry structure and low-neckdown features make it the choice for fast switching with low transition times. This device also has a high drain-to-source breakdown voltage of 60V, making it suitable for high-voltage applications. The high-frequency performance is excellent; the device is able to switch at frequencies up to 1.7GHz and operates with low-noise.

The CSD25501F3T has an extremely low power dissipation compared to other MOSFETs due to its low on-resistance and high voltage rating. It is also protected against over-voltage, over-current, and thermal stress, making it highly reliable. The device is ESD (electrostatic discharge) protected with a Human Body Model of 8kV and a Machine Model of 400V.

The CSD25501F3T works on the principle of the MOSFET, which relies on the presence of a reverse-biased gate-source junction. A reverse-biased junction implies the voltage between the gate and source terminals of the device is at a higher voltage potential than the voltage between the drain and source. This allows current to flow between the source and drain, which can be varied by the gate voltage. If a higher potential is applied to the gate, then more electrons are attracted from the source and current can flow more freely between the drain and source.

In summary, the CSD25501F3T is a N-Channel MOSFET that offers high performance, fast switching, and low-noise operation. It has a low on-resistance and gate charge, making it the ideal solution for switching power converters, servers, general-purpose switching and DC-DC converters. The device is highly reliable and is protected against over-voltage, over-current, and thermal stress. The device operates on the principle of a reverse-biased gate-source junction, which allows current to flow between the source and drain, with the amount of current regulated by the variation of the gate voltage.

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