Allicdata Part #: | 296-24260-2-ND |
Manufacturer Part#: |
CSD25401Q3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Texas Instruments |
Short Description: | MOSFET P-CH 20V 60A 8-SON |
More Detail: | P-Channel 20V 14A (Ta), 60A (Tc) 2.8W (Ta) Surface... |
DataSheet: | CSD25401Q3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1.2V @ 250µA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | 8-VSON-CLIP (3.3x3.3) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.8W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1400pF @ 10V |
Vgs (Max): | ±12V |
Gate Charge (Qg) (Max) @ Vgs: | 12.3nC @ 4.5V |
Series: | NexFET™ |
Rds On (Max) @ Id, Vgs: | 11.7 mOhm @ 10A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 14A (Ta), 60A (Tc) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The CSD25401Q3 is a high-density advanced low-RDS(on) power MOSFET. It is designed to be used in portable electronics and other applications where space saving is a primary concern. The device is based on the latest technology which includes ultra-low gate charge and low on-state resistance making it one of the most efficient devices on the market. The CSD25401Q3 is available in a variety of package styles, sizes and areas.
The CSD25401Q3 is a N-channel MOSFET. It has a source-drain voltage rating of 20V and is capable of operating at a maximum temperature of 175°C. It has an on-resistance of 4.4 mΩ making it an ideal choice for applications requiring low power loss. The device also has a high gate-to-source capacitance, enabling fast switching and high power efficiency.
The CSD25401Q3 is suitable for use in a variety of different applications. It is ideal for use in power converters, automotive electronic control units, gate drivers and other high-power applications. It is also well suited for power management applications such as battery chargers and switching regulators. The device is also well suited for use in high-frequency switching applications such as those found in mobile phones, GSM and CDMA systems.
The working principle of the CSD25401Q3 is relatively simple. When a voltage is applied to the gate of the MOSFET, a electric field is created which attracts electrons from the source to the drain. This creates a current path from the source to the drain and the resistance between them. The lower the applied gate voltage, the lower the resistance between source and drain and the greater the amount of current that can flow.
The CSD25401Q3 is a powerful and reliable device and offers advantages over other FETs due to its low RDS(on) rating and excellent on-state resistance. It is capable of handling high powers without the need for additional heating elements and is suitable for operation over a wide temperature range. The device is also available in a variety of package styles and sizes, making it suitable for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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