Allicdata Part #: | 296-38615-2-ND |
Manufacturer Part#: |
CSD23203WT |
Price: | $ 0.29 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Texas Instruments |
Short Description: | MOSFET P-CH 8V 3A 6DSBGA |
More Detail: | P-Channel 8V 3A (Ta) 750mW (Ta) Surface Mount 6-DS... |
DataSheet: | CSD23203WT Datasheet/PDF |
Quantity: | 3000 |
250 +: | $ 0.25618 |
500 +: | $ 0.21677 |
750 +: | $ 0.18721 |
1250 +: | $ 0.16750 |
Vgs(th) (Max) @ Id: | 1.1V @ 250µA |
Package / Case: | 6-UFBGA, DSBGA |
Supplier Device Package: | 6-DSBGA |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 750mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 914pF @ 4V |
Vgs (Max): | -6V |
Gate Charge (Qg) (Max) @ Vgs: | 6.3nC @ 4.5V |
Series: | NexFET™ |
Rds On (Max) @ Id, Vgs: | 19.4 mOhm @ 1.5A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 3A (Ta) |
Drain to Source Voltage (Vdss): | 8V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The CSD23203WT is a type of single FET (Field-Effect Transistor) commonly used in a variety of different applications. This type of FET is particularly useful when dealing with high currents or high voltages, as they are typically capable of providing superior performance in these situations when compared to other components. As such, the CSD23203WT has grown in popularity in recent years and has become increasingly popular in various applications.
In terms of its application field, the CSD23203WT is often used in switching and power control applications. In these applications, the FET acts as a switch, allowing for power to be routed to particular components depending on the needs of the device. This can be seen in everything from computers, to drones, to electric cars and more. By allowing for precise power control, the CSD23203WT can help to ensure that the device operates at peak efficiency while also avoiding any potential damage due to overheating or overvoltage.
In terms of its working principle, the CSD23203WT is essentially a voltage-controlled resistor. This means that the resistance of the FET is determined by the voltage applied across it. In other words, when a voltage is applied to the FET, there will be a corresponding change in the resistance of the FET. This means that the FET can be used to regulate the amount of current that is flowing through a particular part of the circuit.
The CSD23203WT also has a gate-source schottky diode built into it, which is used for protecting the FET from high voltages. This diode will begin to conduct as soon as the voltage across it reaches its threshold voltage, which helps to prevent any potential damage from occurring due to an overvoltage situation. In addition, the FET also has an avalanche breakdown voltage which helps to limit any further voltage increases beyond the threshold.
Overall, the CSD23203WT is a powerful and reliable FET often used for switching and power control applications. The FET’s ability to precisely regulate power with its voltage-controlled resistor and built-in schottky diode make it a great choice for many different applications. It is a popular choice due to its high levels of performance and reliability, and is likely to remain so in the years to come.
The specific data is subject to PDF, and the above content is for reference
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