Allicdata Part #: | 296-47760-2-ND |
Manufacturer Part#: |
CSD25485F5 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Texas Instruments |
Short Description: | 20V P-CHANNEL FEMTOFET |
More Detail: | P-Channel 20V 3.2A (Ta) 500mW (Ta) Surface Mount 3... |
DataSheet: | CSD25485F5 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1.3V @ 250µA |
Package / Case: | 3-XFDFN |
Supplier Device Package: | 3-PICOSTAR |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 500mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 533pF @ 10V |
Vgs (Max): | -12V |
Gate Charge (Qg) (Max) @ Vgs: | 3.5nC @ 4.5V |
Series: | FemtoFET™ |
Rds On (Max) @ Id, Vgs: | 35 mOhm @ 900mA, 8V |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 8V |
Current - Continuous Drain (Id) @ 25°C: | 3.2A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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CSD25485F5 application field and working principle
The CSD25485F5 is a Mouser-stock single N-Channel field effect transistor (FET) designed for use in many applications requiring load and power switch management. It has high current sensing and load impedance levels, which makes it suitable for use in power management and automotive power management applications.
This FET is composed of both an N-channel junction field-effect transistor (JFET) and a p-type MOS transistor (MOSFET). The JFET acts as a low impedance path that can be used to control the resistance of the FET. The MOSFET controls the on and off state of the FET. This configuration allows the use of a very low input voltage to control the output voltage, making it very efficient in controlling power.
The FET is typically used in power management applications such as motor control, battery management, current sensing applications, and medical devices. It can be used to control the operation of a motor, providing a fast switchable path with low power loss. In battery management applications, it can be used to sense the current of individual cells and to switch the power delivery between high and low currents. It can also be used in medical devices such as pacemakers, to provide an electronically controlled current for heart rate control.
The working principle of the CSD25485F5 FET is based on capacitively coupled control of both the JFET and the MOSFET. The FET is turned on when a voltage is applied across its gate and source electrodes, increasing the current flowing through the channel and allowing the load to be switched on. The FET is turned off when the gate voltage is reduced below the threshold voltage, decreasing the channel current and allowing the load to be switched off.
The CSD25485F5 FET is designed to provide fast switching speed and high switching voltage with very low gate charge. This makes it suitable for use in high frequency and high voltage operations, such as motor control and power switching. The devices are also designed with a high temperature rating, making them suitable for use in high temperature environments.
The CSD25485F5 FET is an excellent choice for use in power management, automotive power management, and medical devices. It has an excellent combination of fast switching speed, high voltage, and low gate charge, making it ideal for high frequency, high voltage applications. Additionally, its high temperature rating and capacitively coupled control make it suitable for use in high temperature environments.
The specific data is subject to PDF, and the above content is for reference
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