DDTB114EU-7-F Allicdata Electronics
Allicdata Part #:

DDTB114EU-7-F-ND

Manufacturer Part#:

DDTB114EU-7-F

Price: $ 0.05
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS PREBIAS PNP 200MW SOT323
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: DDTB114EU-7-F datasheetDDTB114EU-7-F Datasheet/PDF
Quantity: 1000
3000 +: $ 0.04208
Stock 1000Can Ship Immediately
$ 0.05
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V
Base Part Number: DTB114
Supplier Device Package: SOT-323
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Power - Max: 200mW
Frequency - Transition: 200MHz
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Series: --
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 10 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 500mA
Transistor Type: PNP - Pre-Biased
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The DDTB114EU-7-F is a type of transistor which belongs to the single, pre-biased Bipolar Junction Transistor (BJT) family. It is a three-terminal device that is used in many applications such as amplifiers, switches, oscillators and rectifiers. This transistor is a NPN-type transistor which mainly features a low collector to emitter saturation voltage, good switch transition speed and high gain linearity ratio.

In its basic form, the DDTB114EU-7-F has three terminals, namely: the base, the collector and the emitter. The base is the control terminal for the transistor and it acts as the gate for the flow of current. The collector is the positive terminal, it absorbs the majority of the current passing through the transistor. The emitter is the negative terminal, it releases the majority of the current and is connected to ground. In the DDTB114EU-7-F, the base is pre-biased which means the current passing through the gate is already existing, hence eliminating the need for an external bias.

The DDTB114EU-7-F is mainly used in amplifier applications where it is responsible for controlling the flow of current and also providing an output signal. It can also be used as an oscillator, where the frequency of the oscillation is determined by the amount of voltage applied to the base. It can also be used in switching applications, where the transistor is used to control the conduction of a power circuit and the collector can be used to output the signal.

The DDTB114EU-7-F is also used in rectifier applications, where it is mainly used for the rectification of AC signals. To further understand the working principle of the DDTB114EU-7-F, consider the NPN transistor as a switch. When a small voltage is applied to the base, the current passes through the transistor which results in a high voltage at the collector. This high voltage can then be used to control external circuits to get the desired results.

In conclusion, the DDTB114EU-7-F is a type of transistor that belongs to the single, pre-biased Bipolar Junction Transistor family. It is mainly used in amplifier, oscillator, switch and rectifier applications with the base pre-biased for fast switching, low collector to emitter saturation and high linearity of the gain. The main purpose of this transistor is to control the flow of current and provide an output signal.

The specific data is subject to PDF, and the above content is for reference

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