DDTB122LC-7 Discrete Semiconductor Products

DC Current Gain (hFE) (Min) @ Ic, Vce:	56 @ 50mA, 5V
Base Part Number:	DTB122
Supplier Device Package:	SOT-23-3
Package / Case:	TO-236-3, SC-59, SOT-23-3
Mounting Type:	Surface Mount
Power - Max:	200mW
Frequency - Transition:	200MHz
Current - Collector Cutoff (Max):	500nA
Vce Saturation (Max) @ Ib, Ic:	300mV @ 2.5mA, 50mA
Series:	--
Resistor - Emitter Base (R2):	10 kOhms
Resistor - Base (R1):	220 Ohms
Voltage - Collector Emitter Breakdown (Max):	50V
Current - Collector (Ic) (Max):	500mA
Transistor Type:	PNP - Pre-Biased
Part Status:	Discontinued at Digi-Key
Packaging:	Tape & Reel (TR)

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DDTB122LC-7 Application Field and Working Principle

DDTB122LC-7 is a high-performance single base, pre-biased bipolar junction transistor (BJT) designed to provide reliable signal switching and amplification functions. It is ideally suited for use in low voltage and low power applications in which lower gain and lower noise are desired.The DDTB122LC-7 is designed to combine the advantages of both a bipolar junction transistor and a field-effect transistor. By combining the linearity of the BJT and the efficient low-leakage switching and low power consumption of the FET, the DDTB122LC-7 offers high performance and improved circuitry design over traditional BJTs.In a pre-biased BJT configuration, the base-emitter junction is biased at negative voltage relative to the emitter. This bias condition allows the transistor to be activated with a small base current, thus reducing power consumption and resulting in lower current operation than a conventional BJT. This feature is ideal for applications with limited power supplies.The DDTB122LC-7 is composed of a monolithic silicon die, encapsulated in an 8-pin package. It has two NPN transistors, each with a collector terminal, an emitter terminal, and a base connection. The central die can also incorporate a resistor, allowing for a negative feedback mechanism for current regulation.The DDTB122LC-7 is primarily used in automotive, broadcast, and industrial applications. Its low power consumption and excellent performance in high frequency switching make it ideal for a wide range of applications, such as motor control circuits, audio amplifiers, and power supplies.The DDTB122LC-7 works on the principle of bipolar junction transistor (BJT) structure, whereby a reverse-biased base region separates two P-doped regions (the emitter and collector). When a forward voltage is applied between the base and emitter junction, electrons accumulate in the base region, creating an inversion layer. This layer forms part of the conducting channel between the emitter and collector junctions. As the current flowing through the channel increases, the voltage drop across the collector-emitter decreases and the transistor is effectively "on." The magnitude of the current is then controlled by the external bias voltage applied to the base-emitter junction.The DDTB122LC-7 combines the low power consumption of an FET design with the higher gains attainable with a bipolar junction transistor. By using a negative base-emitter bias, the device can be operated at a much lower current while still achieving the desired amplification. This flexibility makes the DDTB122LC-7 an ideal solution for applications that require a small transistor with good switching and power consumption characteristics. In summary, the DDTB122LC-7 is a unique single base pre-biased bipolar junction transistor that offers excellent performance in high frequency switching applications. Its low power consumption and excellent performance make it ideal for a wide range of applications, such as motor control circuits, audio amplifiers, and power supplies.

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