DDTB122TU-7-F Discrete Semiconductor Products

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A DDTB122TU-7-F transistor pair is a single, pre-biased, bipolar junction transistor that is a flexible and proven solution for many circuits. Commonly used for differential amplifiers and low noise operating circuits, the DDTB122TU-7-F delivers reliable performance even when operated in harsh environments. Featuring a built-in integrated base-emitter junction, this device can be used in high-speed operation as it provides greater than 500MHz bandwidth. Furthermore, its low Vbe of 0.5V minimises power losses and reduces the need for an additional bias element.

DDTB122TU-7-F transistors are primarily used in low to medium frequency applications such as audio amplifiers, DC-DC converters, low noise operating circuits and other signal discrete knob-and-mode protection circuits. These transistors can also be used in signal amplification and switching applications. They feature high voltage complementaty-symmetry NPN/PNP structure with very low noise and excellent common-mode input signal range.

Having a base-emitter voltage of 1.2V and a high gain of around 25, the DDTB122TU-7-F transistors are highly suitable for signal processing applications. It also features a wide temperature range from -55°C to 150°C, allowing these transistors to be used in harsh climates. These devices have a wide dynamic range of between 0V and 10V and are specified for an average current gain of below 0.01V.

Due to the single, pre-biased structure of the DDTB122TU-7-F transistors, special concentration is required for biasing these devices. It is beneficial to set the base voltage very close to the emitter voltage in the circuit. As such the transistor pair behaves as two transistor switches; when one of the two transistors is biased above its threshold voltage, it will turn ON while the other simultaneously turns OFF. This process is called “complementary switching” and is highly used in the power switching applications.

In addition, these transistors have a high break-down voltage and low on-resistance of 4Ω. Furthermore, the base-collector junction has a high voltage rating of 30V for more efficient current flow. All this leads to faster switching and drives greater power. Furthermore, the device features a long lead with high reliability; thus, it can be used in applications with extended working hours.

The DDTB122TU-7-F Transistor pair is one of the most effective solutions when used in high-speed, power-switching circuits. Its high-voltage complementarity allows the device to perform reliably under harsh conditions and the integrated base-emitter junction allows the transistor to operate at extremely high switching frequencies. The long lead with high reliability makes the device highly suitable for extended working hours. These features make the DDTB122TU-7-F a preferred choice for applications requiring efficient energy switching, signal amplification and noise suppression.

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