Allicdata Part #: | DDTB123TC-7-F-ND |
Manufacturer Part#: |
DDTB123TC-7-F |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS PREBIAS PNP 200MW SOT23-3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | DDTB123TC-7-F Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.03156 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 500mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 2.2 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 2.5mA, 50mA |
Current - Collector Cutoff (Max): | 500nA (ICBO) |
Frequency - Transition: | 200MHz |
Power - Max: | 200mW |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
Base Part Number: | DTB123 |
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The DDTB123TC-7-F is a single pre-biased bipolar junction transistors (BJT) built for applications demanding high frequencies and wide bandwidths. Its features include low power consumption, a high transconductance range, as well as high gain linearity. As a pre-biased BJT, it is also known as a “self-biased BJT.”
A bipolar junction transistor (BJT) is the most common type of transistor available. A BJT has three terminals known as the emitter, base and collector, and operates by having the application of an external voltage to the base of the transistor and allowing it to influence the flow of current between the collector and the emitter. When the base current lacks and the collector current remains low, there will be a very low power consumption.
The DDTB123TC-7-F is specially designed for applications that require high frequencies, wide bandwidths, and very small form factors. It is available in a 3-pin SOT-23 package, making it ideal for space-constrained applications. The device also has a small signal current gain of 150 and a forward voltage drop of 0.40V, which provide a very high level of performance that is suitable for low-power applications.
This BJT also has an integrated resistor that keeps the collector and base voltage at 0.9 V, making it a pre-biased device. This feature provides a stable operating point and simplifies the bias conditions of the BJT, allowing for a low power performance with an optimal quiescent current that is suitable for battery powered applications.
In addition, this BJT has a wide range of transconductance that ranges from 500 μS to 1200μS, making it very suitable for applications operating in wide bandwidths and high frequencies. With its high gain linearity, the device also operates at a wide range of currents, allowing it to provide the necessary high-level performance required in a wide range of applications. Furthermore, the device also has an extremely low input capacitance of 0.95 pF and an output capacitance of 0.75 pF.
The DDTB123TC-7-F is suitable for a wide range of applications requiring high performance, low power consumption, and small form factors. Its pre-biased feature simplifies the bias conditions, making it ideal for battery powered applications, while its wide bandwidth and high gain linearity provide the necessary performance for high-end applications. Furthermore, its small size and low input and output capacitance make it ideal for space-constrained applications. As such, the DDTB123TC-7-F is an ideal device for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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DDTB122JU-7-F | Diodes Incor... | -- | 1000 | TRANS PREBIAS PNP 200MW S... |
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