DDTB114GU-7-F Allicdata Electronics
Allicdata Part #:

DDTB114GU-7-FDITR-ND

Manufacturer Part#:

DDTB114GU-7-F

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS PREBIAS PNP 200MW SOT323
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: DDTB114GU-7-F datasheetDDTB114GU-7-F Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
3000 +: $ 0.03825
6000 +: $ 0.03326
15000 +: $ 0.02827
30000 +: $ 0.02661
75000 +: $ 0.02495
Stock 1000Can Ship Immediately
$ 0.04
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Base Part Number: DTB114
Supplier Device Package: SOT-323
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Power - Max: 200mW
Frequency - Transition: 200MHz
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Series: --
Resistor - Emitter Base (R2): 10 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 500mA
Transistor Type: PNP - Pre-Biased
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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A DDTB114GU-7-F is a single pre-biased bipolar junction transistor (BJT) used for switching and amplifier applications. It is a NPN power transistor, with a collector-emitter voltage rating of 50V, and a collector current capability of 4A. This makes it an excellent choice for power applications, particularly in low-power automotive and industrial electronics.

A BJT is a solid-state device composed of two diodes connected back to back. The two diodes can either be electrons (NPN transistors) or holes (PNP transistors). The base of the transistor is connected to the input, while the collector and emitter are connected to the output. When the input is true (high), current flows through the collector and the transistor turns on, allowing current to flow from the collector to the emitter. When the input is false (low), the transistor turns off and no current can flow. This is the basis for the switching and amplifier applications for which this type of transistor was designed.

The pre-bias on a DDTB114GU-7-F ensures that the transistor is turned on slightly, allowing the current to be adjusted to the desired level. This is useful in applications where it is important to control current levels. It also reduces the requirements of the control circuit, since it no longer needs to provide a large amount of current.

The DDTB114GU-7-F can be used in a variety of applications, including power switching, high-voltage switching, voltage regulation, and as a low-power amplifier. It is particularly well-suited for automotive and industrial applications, where its high-voltage rating and current capability make it an ideal choice for power systems. It can also be used in battery powered applications, such as LED lighting and low-power robot control.

The DDTB114GU-7-F is also available in a wide range of package styles, including SOIC, D-Pak, and TO-92. This allows designers to find the optimal solution for their particular application. The package styles are also available in a variety of case sizes, from small 6-pin packages to larger 24-pin packages. This further increases the flexibility and versatility of the DDTB114GU-7-F.

The DDTB114GU-7-F is an excellent choice for a wide range of switching and amplifier applications, due to its high-voltage rating and current capability. Its pre-biased design makes it a great choice for low-power applications, while its variety of package styles and case sizes offer designers flexibility and options. The DDTB114GU-7-F has proven itself to be a reliable and cost-effective solution for many applications.

The specific data is subject to PDF, and the above content is for reference

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