DDTB122TC-7-F Discrete Semiconductor Products |
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Allicdata Part #: | DDTB122TC-FDITR-ND |
Manufacturer Part#: |
DDTB122TC-7-F |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS PREBIAS PNP 200MW SOT23-3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | DDTB122TC-7-F Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
3000 +: | $ 0.03188 |
6000 +: | $ 0.02772 |
15000 +: | $ 0.02356 |
30000 +: | $ 0.02218 |
75000 +: | $ 0.02079 |
150000 +: | $ 0.01802 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 5mA, 5V |
Base Part Number: | DTB122 |
Supplier Device Package: | SOT-23-3 |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Mounting Type: | Surface Mount |
Power - Max: | 200mW |
Frequency - Transition: | 200MHz |
Current - Collector Cutoff (Max): | 500nA (ICBO) |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 2.5mA, 50mA |
Series: | -- |
Resistor - Base (R1): | 220 Ohms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 500mA |
Transistor Type: | PNP - Pre-Biased |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
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DDTB122TC-7-F is a type of single, Pre-Biased, Bipolar Junction Transistor (BJT). This type of transistor combines two diodes junctions and a third bipolar junction to create a three-layer between two terminals. It is a versatile device and has a wide range of applications.
The DDTB122TC-7-F is typically used in high-temperature environments, such as in automotive, military, and aerospace applications, for which it is able to operate at temperatures up to 175°C. It can also be used for high- or low-voltage applications, switching, amplifying, or modulating signals, and can be used in Voltage Regulator Modules (VRMs).
As a Pre-Biased BJT, the DDTB122TC-7-F is designed to be used in applications that require a slightly different input bias than standard BJTs. It features an integrated bias resistor that is built into the base-collector junction. This allows the transistor to be more easily biased, which can make the design easier since it eliminates the need to manually calculate and choose appropriate bias resistor values. The transistor is also available in several different lead configurations, making it easier to integrate into an existing design.
The working principle of the DDTB122TC-7-F is based on the same principle as other BJTs. When a bias voltage is applied to the base-emitter junction, it opens a channel in the base region between the base and collector regions. This allows a current to flow from the emitter to the collector, creating the output current. The magnitude of the output current is determined by the gain of the transistor, which can be adjusted by controlling the amount of bias voltage applied to the base-emitter junction.
The DDTB122TC-7-F is especially well-suited for applications that require reliability and consistent performance, such as in automotive, military, and aerospace applications. The transistor also has a good power dissipation rating and comes in packages that allow for easy integration into existing designs. This makes the DDTB122TC-7-F an ideal choice for applications that require high-temperature performance and reliable operation.
The specific data is subject to PDF, and the above content is for reference
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