DDTB143TC-7-F Allicdata Electronics
Allicdata Part #:

DDTB143TC-7-F-ND

Manufacturer Part#:

DDTB143TC-7-F

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS PREBIAS PNP 200MW SOT23-3
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: DDTB143TC-7-F datasheetDDTB143TC-7-F Datasheet/PDF
Quantity: 1000
1 +: $ 0.04000
10 +: $ 0.03880
100 +: $ 0.03800
1000 +: $ 0.03720
10000 +: $ 0.03600
Stock 1000Can Ship Immediately
$ 0.04
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA (ICBO)
Frequency - Transition: 200MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Base Part Number: DTB143
Description

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Transistors have become an important part of modern electronics. Bipolar transistors, or BJTs, are versatile building blocks for digital and analog circuits alike. They can be used for amplifying, switching and a variety of other applications. A particular type of bipolar transistor is the DDTB143TC-7-F. This article will discuss the application field and working principle of this popular device.

Application Field

The DDTB143TC-7-F is a ground-referenced pre-biased NPN transistor. It is typically used for fast switching applications in control circuits such as those found in automotive or industrial applications. It is often used to drive headlights, turn signals, and other heavy load circuits. The device can also be used as a linear amplifier with a wide range of input and output frequencies. The DDTB143TC-7-F can be used as a non-inverting amplifier with a gain of up to 5.1.

Working Principle

The DDTB143TC-7-F is a bipolar Junction Transistor (BJT). It consists of three layers of semiconductor material between two metal contacts called a ‘base’ and an ‘emitter’. When a voltage is applied to the base, current flows from the emitter to the collector terminal of the transistor. This junction can transmit current from the emitter to the collector, allowing for amplification and voltage regulation.

The DDTB143TC-7-F has high current-handling capabilities and is built to tolerate large voltage surges. It is also well suited for high-frequency applications due to its fast switching speed. Additionally, it has a low collector-emitter saturation voltage which provides improved power efficiency. It also has built-in protection to prevent its internal components from damage due to reverse-bias conditions.

The DDTB143TC-7-F has many uses in low-current applications such as line-controlled switches, small sensors, and signal conditioners. It can also be used as a high-voltage resistor in many applications. Additionally, it can be used as an inverting amplifier for optical signal amplification. The DDTB143TC-7-F is also useful in applications that require high-speed operation as it has a fast turn-on and turn-off time.

Conclusion

The DDTB143TC-7-F is a pre-biased NPN transistor designed for use in digital and analog circuits. It is well suited for fast switching applications such as automotive, industrial, and lighting applications. It can also be used as an amplifier with a high current-handling capability and fast switching speeds. The device has built-in protection to prevent damage from reverse-bias conditions and provides improved power efficiency. The DDTB143TC-7-F is an ideal choice for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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