DDTB143EU-7-F Allicdata Electronics
Allicdata Part #:

DDTB143EU-7-F-ND

Manufacturer Part#:

DDTB143EU-7-F

Price: $ 0.05
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS PREBIAS PNP 200MW SOT323
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: DDTB143EU-7-F datasheetDDTB143EU-7-F Datasheet/PDF
Quantity: 1000
3000 +: $ 0.04208
Stock 1000Can Ship Immediately
$ 0.05
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 47 @ 50mA, 5V
Base Part Number: DTB143
Supplier Device Package: SOT-323
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Power - Max: 200mW
Frequency - Transition: 200MHz
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Series: --
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 500mA
Transistor Type: PNP - Pre-Biased
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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A Bipolar Junction Transistor (BJT) is a three-terminal device composed of two diodes connected in opposite directions. A BJT can be used as an amplifier or as a switch. The DDTB143EU-7-F is a type of single, pre-biased BJT, which is found in many audio applications. This article will discuss the application field and working principle of the DDTB143EU-7-F.

Application Field

The DDTB143EU-7-F can be used for audio applications such as audio amplifiers, mixing consoles, pre-amp stages, and audio recording equipment. It is also used in power management applications like power converters, power amplifiers, and motor controllers. This transistor can also be found in industrial and automotive applications such as motor and engine control systems, current sensors, voltage regulators, and automotive audio systems. Furthermore, the DDTB143EU-7-F is also suited for applications such as RF amplifiers, RF switches, optical switches, small-signal amplifiers, small-signal switches, and audio amplifiers.

Working Principle

The DDTB143EU-7-F is a single, pre-biased BJT. In a single BJT, the collector current is flowing through the collector-to-emitter junction, while in a pre-biased BJT, an external base resistor is used to bias the BJT so that the collector current is controlled. The amount of current that flows through the BJT depends on the voltage applied to the base terminal. Increasing the voltage applied to the base terminal causes an increase in the collector current. This is called the common-base configuration.

The collector-to-emitter current is determined by the amount of voltage applied to the base-emitter junction. When the voltage applied to the base-emitter junction is increased, the collector-to-emitter current increases. This action controls the amount of current flowing through the BJT. The relationship between the base voltage and the collector-to-emitter current is called the transistor\'s gain. The higher the base voltage, the higher the collector-to-emitter current, and vice versa.

The DDTB143EU-7-F has an integrated pre-biased circuit, which makes it particularly suitable for audio and power management applications. The pre-biased circuit helps in controlling the base and collector current to yield the desired collector current. This transistor is also designed to produce very low noise levels and has a good temperature stability, making it suitable for audio applications.

Conclusion

The DDTB143EU-7-F is a single, pre-biased BJT that can be used in many audio and power management applications. This transistor is designed to produce low noise and also has a good temperature stability. It has an integrated pre-biased circuit which helps to control the base and collector current to yield the desired collector current. Therefore, the DDTB143EU-7-F is suitable for applications that require reliable operation, low noise, and precise control of the base and collector current.

The specific data is subject to PDF, and the above content is for reference

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