Allicdata Part #: | DDTB122LUDITR-ND |
Manufacturer Part#: |
DDTB122LU-7 |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS PREBIAS PNP 200MW SOT323 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | DDTB122LU-7 Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
30000 +: | $ 0.04823 |
Resistor - Emitter Base (R2): | 10 kOhms |
Base Part Number: | DTB122 |
Supplier Device Package: | SOT-323 |
Package / Case: | SC-70, SOT-323 |
Mounting Type: | Surface Mount |
Power - Max: | 200mW |
Frequency - Transition: | 200MHz |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 2.5mA, 50mA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 56 @ 50mA, 5V |
Series: | -- |
Resistor - Base (R1): | 220 Ohms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 500mA |
Transistor Type: | PNP - Pre-Biased |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Discontinued at Digi-Key |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
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A DDTB122LU-7 is a single, pre-biased bipolar junction transistor (BJT), which is a type of semiconductor that amplifies or switches electronic signals and electrical power. This device is used in applications such as amplifying incoming signals, switching frequency and voltage, controlling current, and regulating electricity levels. The DDTB122LU-7 is designed specifically for use in high-performance, low power, and high-speed switching systems.
The word “Bipolar” refers to the type of transistor that has two separate, distinct functions. The transistor works by controlling one electrical signal by allowing or blocking current to flow either in or out of the base. When current is allowed, it is known as “biasing” the transistor, and it can then be used to amplify the signal.
The DDTB122LU-7 features two layers of electronics material separated by a P-type semiconductor layer called “Base”, in which an electric current is ever-present. This type of transistor is “pre-biased”, in that it is initially set up to allow current to flow in a particular direction, rather than from no direction at all. Therefore, when an external voltage is applied to the transistor, it needs to be slightly greater than the bias applied to the Base in order for any current to flow in or out of it.
The transistor’s base is connected to the base of a transistor which is the point at which electrons flow in and out. The emitter of the transistor is then connected to the collector, which is the logic node in the circuit. Between the collector and the base lies a charge-carrier medium (typically silicon) which serves to control the speed of the gain control. The gain of the transistor is then represented as the “Beta”, and is measured as the ratio of collector current to base current.
The DDTB122LU-7 also features integrated protection circuitry which protects it from damage due to too much heat, current, or voltage. It has an operating temperature range of -55°C to 125°C and a low saturation voltage of 0.5 V, which makes it an ideal choice for applications where low power, high speed, and reliable operation are desired. It is also designed for high performance, which makes it suitable for use in a wide variety of electronics applications.
Since the DDTB122LU-7 is a pre-biased transistor, it does not require a lot of external circuitry to operate. This feature makes it highly suited for applications where cost and space are critical. Additionally, since it is designed for high performance and reliability, the DDTB122LU-7 is a popular choice for industrial and commercial applications.
In summary, the DDTB122LU-7 is an excellent choice for a variety of electronics applications requiring low power, high speed, and reliable operation. Its integrated protection circuitry and low saturation voltage make it an ideal choice for systems where cost, space, and longevity are critical. Since it is a pre-biased transistor, external circuitry is minimal, and its high performance makes it suitable for both industrial and commercial applications.
The specific data is subject to PDF, and the above content is for reference
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