DDTB142JU-7-F Allicdata Electronics

DDTB142JU-7-F Discrete Semiconductor Products

Allicdata Part #:

DDTB142JU-FDITR-ND

Manufacturer Part#:

DDTB142JU-7-F

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS PREBIAS PNP 200MW SOT323
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: DDTB142JU-7-F datasheetDDTB142JU-7-F Datasheet/PDF
Quantity: 3000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
3000 +: $ 0.03985
Stock 3000Can Ship Immediately
$ 0.04
Specifications
Resistor - Emitter Base (R2): 10 kOhms
Base Part Number: DTB142
Supplier Device Package: SOT-323
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Power - Max: 200mW
Frequency - Transition: 200MHz
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V
Series: --
Resistor - Base (R1): 470 Ohms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 500mA
Transistor Type: PNP - Pre-Biased
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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The DDTB142JU-7-F is a pre-biased bipolar junction transistor (BJT), designed for high performance, low power device applications. Developed by Infineon Technologies, this single-chip BJT features an integrated circuit (IC) with comprehensive specifications which enable easy operation when utilized in BJT base-controlled circuit configurations.

With its low-noise design, this BJT has the ability to work with a wide range of input signals, allowing for the amplification and switching of very weak signals. To further simplify BJT transistor design and enable operate in a wide range of environments, this device can be pre-biased to operate with various supply voltage ranges, while providing both linear and non-linear control.

The DDTB142JU-7-F is most commonly used in low-power, high-quality audio applications as it works as a voltage amplifier to provide amplification of weak input signals which would be difficult or impossible to achieve with other devices. This device also has the ability to easily switch high-power loads, making it a superior choice for audio power amplifiers.

When used as a voltage amplifier, the output signal is mainly limited by the internal thermal noise generated within the transistor. As such, the noise performance of the device is one of its most highly valued qualities, providing near-noise-free audio reproduction even at very low levels.

The working principle of the DDTB142JU-7-F is based on the basic functions of a BJT. When an input voltage is applied to the base, a current flow between the emitter and collector occurs. This current flow is then amplified by the base-emitter voltage drop and transferred to the collector. The output voltage is determined by the ratio of the emitter and collector resistors (beta) and the base current.

By controlling the input signal to the base of the device, the collector current can be changed in an exponential manner, enabling smooth signal control and linear power amplification. The DDTB142JU-7-F allows for a wide range of dynamic control and signal amplification by utilizing the base-controlled transistor principle.

This IC is also composed of a set of additional components to maintian a pre-biased operating point. These components consist of a temperature-stable bias reference, two series-connected resistors, and two parallel-connected resistors. The combination of these components provides a range of voltage supply levels and input signals, allowing for the adjustment of the pre-bias voltage and thermal bias compensation.

The DDTB142JU-7-F is a versatile and dependable pre-biased BJT, perfectly suited for low-noise, low-power amplifier and switch applications. With its comprehensive set of specifications, easy-to-use functionalities, and wide range of dynamic control features, this device provides efficient operation in complex applications where other solutions may be inadequate.

The specific data is subject to PDF, and the above content is for reference

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